Adaptive impedance translation circuit

ABSTRACT

The present invention relates to an adaptable RF impedance translation circuit that includes a first group of inductive elements cascaded in series between an input and an output without any series switching elements, a second group of inductive elements cascaded in series, and a group of switching elements that are capable of electrically coupling the first group of inductive elements to the second group of inductive elements. Further, the adaptable RF impedance translation circuit includes at least one variable shunt capacitance circuit electrically coupled between a common reference and at least one connection node in the adaptable RF impedance translation circuit, which includes control circuitry to select either an OFF state or an ON state associated with each of the switching elements and to select a capacitance associated with each variable shunt capacitance circuit to control impedance translation characteristics of the adaptable RE impedance translation circuit.

This application claims the benefit of provisional patent applicationSer. No. 61/078,108, filed Jul. 3, 2008, the disclosure of which ishereby incorporated herein by reference in its entirety.

FIELD OF THE INVENTION

Embodiments of the present invention relate to impedance translationcircuits, which may be used in radio frequency (RF) communicationssystems.

BACKGROUND OF THE INVENTION

As wireless communications devices become increasingly ubiquitous,support of multiple communications protocols is often required. As aresult, many wireless communications devices are multi-mode devices,which are capable of operating using two or more RF communicationsbands, which may have frequency ranges that are widely separated fromone another, are capable of operating in a half-duplex or a full-duplexoperating mode, may operate over a wide range of output power levels,may use multiple modulation techniques, or any combination thereof. Toenable high levels of integration, the wireless communications devicesmay need to be physically small. Therefore, sharing as many componentsas possible when operating in different modes is desirable. For example,use of a common power amplifier, a common antenna, or both may bedesirable to reduce size, cost, or both. However, one or more adaptiveRF impedance translation circuits may be needed to properly interface acommon power amplifier to an RF antenna over all operating conditions.

One or more adaptive RF impedance translation circuits may be needed toproperly interface an RF antenna to receive circuitry, to a common poweramplifier, or the like over all operating conditions. Specifically, in aportable wireless communications device, an RF antenna may undergo largeloading changes that are dependent upon nearby physical conditions, suchas proximity to a user's body, proximity to metallic objects, or thelike. Such loading changes may cause large changes in a voltage standingwave ratio (VSWR) associated with large impedance changes of the RFantenna. By coupling an adaptive RF impedance translation circuit to theRF antenna it may be possible to compensate for VSWR changes and presentan impedance to other circuitry that has reduced impedance fluctuations.Additionally, portable wireless communications devices are often batterypowered. To conserve power, any adaptive RF impedance translationcircuits may need low insertion loss to reduce power consumption.

Thus, there is a need for an adaptive RF impedance translation circuitthat can operate over at least two communications bands having frequencyranges that are widely separated from one another, has low insertionloss, is physically small, can operate efficiently over a wide powerrange, and has a wide impedance adjustment range.

SUMMARY OF THE EMBODIMENTS

The present invention relates to an adaptable RF impedance translationcircuit that includes a first group of inductive elements cascaded inseries between an input and an output without any series switchingelements, a second group of inductive elements cascaded in series, and agroup of switching elements that are capable of electrically couplingthe first group of inductive elements to the second group of inductiveelements. Further, the adaptable RF impedance translation circuitincludes at least one variable shunt capacitance circuit electricallycoupled between a common reference and at least one connection node inthe adaptable RF impedance translation circuit, which includes controlcircuitry to select either an OFF state or an ON state associated witheach of the switching elements and to select a capacitance associatedwith each variable shunt capacitance circuit. By controlling theswitching elements and each variable shunt capacitance circuit, thecontrol circuitry controls impedance translation characteristics of theadaptable RF impedance translation circuit.

Since the first group of series cascaded inductive elements does notinclude any series switching elements, insertion losses associated withseries switching elements may be minimized. By selecting the appropriatecombination of OFF states, ON states, or both, numerous circuittopologies may be configured. For example, several different variants ofL networks, T networks, and Pi networks are possible alone, or incombination. By combining a selection of circuit topologies withselecting desired capacitances using variable shunt capacitancecircuits, a broad range of impedance translation characteristics may beavailable. Therefore, a wide impedance adjustment range, a wideoperating frequency range enabling multi-mode operation, and smallphysical size enabling integration may be possible.

Alternate embodiments of the adaptable RF impedance translation circuitmay include any number of groups of series cascaded inductive elements,such that each group of series cascaded inductive elements may includeany number of inductive elements. The adaptable RF impedance translationcircuit may include any number of switching elements coupled between thegroups of series cascaded inductive elements and any number of variableshunt capacitance circuits electrically coupled between the commonreference and the connection nodes. A variable shunt capacitance circuitmay be electrically coupled between the common reference and the input.Similarly, a variable shunt capacitance circuit may be electricallycoupled between the common reference and the output. The commonreference may be ground.

Those skilled in the art will appreciate the scope of the presentinvention and realize additional aspects thereof after reading thefollowing detailed description of the preferred embodiments inassociation with the accompanying drawing figures.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

The accompanying drawing figures incorporated in and forming a part ofthis specification illustrate several aspects of the invention, andtogether with the description serve to explain the principles of theinvention.

FIG. 1 shows a first RF impedance translation circuit according to oneembodiment of the first RF impedance translation circuit.

FIG. 2 shows a first portion of the first RF impedance translationcircuit according to an alternate embodiment of the first RF impedancetranslation circuit.

FIG. 3 shows a second portion of the first RF impedance translationcircuit illustrated in FIG. 2.

FIG. 4 shows the first portion of the first RF impedance translationcircuit according to an additional embodiment of the first RF impedancetranslation circuit.

FIG. 5 shows details of the first RF impedance translation circuitillustrated in FIG. 1 according to an exemplary embodiment of the firstRF impedance translation circuit.

FIGS. 6A and 6B show details of a first inductive element according toone embodiment of the first inductive element.

FIGS. 7A and 7B show details of the first inductive element according toan alternate embodiment of the first inductive element.

FIGS. 8A and 8B show details of the first inductive element according toan additional embodiment of the first inductive element.

FIG. 9 shows details of a first variable shunt capacitance circuitaccording to one embodiment of the first variable shunt capacitancecircuit.

FIG. 10 shows details of the first variable shunt capacitance circuitaccording to an alternate embodiment of the first variable shuntcapacitance circuit.

FIG. 11 shows details of the first variable shunt capacitance circuitaccording to an additional embodiment of the first variable shuntcapacitance circuit.

FIG. 12A shows one embodiment of the first RF impedance translationcircuit.

FIG. 12B shows the first RF impedance translation circuit illustrated inFIG. 12A used with a common power amplifier according to one embodimentof the present invention.

FIG. 13 shows details of the common power amplifier illustrated in FIG.12B according to one embodiment of the common power amplifier.

FIG. 14 shows the first RF impedance translation circuit illustrated inFIG. 12A used with the common power amplifier and an RF antennaaccording to an alternate embodiment of the present invention.

FIG. 15 shows the first RF impedance translation circuit illustrated inFIG. 12A used with the RF antenna according to an additional embodimentof the present invention.

FIG. 16 shows the first RF impedance translation circuit illustrated inFIG. 12A used with a second RF impedance translation circuit accordingto another embodiment of the present invention.

FIG. 17 shows the first RE impedance translation circuit according to asupplemental embodiment of the first RF impedance translation circuit.

FIG. 18 shows the first portion 52 of the first RF impedance translationcircuit according to an alternative embodiment of the first RF impedancetranslation circuit.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The embodiments set forth below represent the necessary information toenable those skilled in the art to practice the invention and illustratethe best mode of practicing the invention. Upon reading the followingdescription in light of the accompanying drawing figures, those skilledin the art will understand the concepts of the invention and willrecognize applications of these concepts not particularly addressedherein. It should be understood that these concepts and applicationsfail within the scope of the disclosure and the accompanying claims.

The present invention relates to an adaptable RF impedance translationcircuit that includes a first group of inductive elements cascaded inseries between an input and an output without any series switchingelements, a second group of inductive elements cascaded in series, and agroup of switching elements that are capable of electrically couplingthe first group of inductive elements to the second group of inductiveelements. Further, the adaptable RF impedance translation circuitincludes at least one variable shunt capacitance circuit electricallycoupled between a common reference and at least one connection node inthe adaptable RF impedance translation circuit, which includes controlcircuitry to select either an OFF state or an ON state associated witheach of the switching elements and to select a capacitance associatedwith each variable shunt capacitance circuit. By controlling theswitching elements and each variable shunt capacitance circuit, thecontrol circuitry controls impedance translation characteristics of theadaptable RF impedance translation circuit.

Since the first group of series cascaded inductive elements does notinclude any series switching elements, insertion losses associated withseries switching elements may be minimized. By selecting the appropriatecombination of OFF states, ON states, or both, numerous circuittopologies may be configured. For example, several different variants ofL networks, T networks, and Pi networks are possible alone or incombination. By combining a selection of circuit topologies withselecting desired capacitances using variable shunt capacitancecircuits, a broad range of impedance translation characteristics may beavailable. Therefore, a wide impedance adjustment range, a wideoperating frequency range enabling multi-mode operation, and smallphysical size enabling integration may be possible.

Alternate embodiments of the adaptable RF impedance translation circuitmay include any number of groups of series cascaded inductive elements,such that each group of series cascaded inductive elements may includeany number of inductive elements. The adaptable RF impedance translationcircuit may include any number of switching elements coupled between thegroups of series cascaded inductive elements and any number of variableshunt capacitance circuits electrically coupled between the commonreference and the connection nodes. A variable shunt capacitance circuitmay be electrically coupled between the common reference and the input.Similarly, a variable shunt capacitance circuit may be electricallycoupled between the common reference and the output. The commonreference may be ground.

FIG. 1 shows a first RF impedance translation circuit 10 according toone embodiment of the first RF impedance translation circuit 10. Thefirst RF impedance translation circuit 10 includes a first group 12 ofinductive elements, which includes a first inductive element 14 and asecond inductive element 16, and a second group 18 of inductiveelements, which includes a third inductive element 20 and a fourthinductive element 22. The first group 12 of inductive elements iscascaded in series between an input INPUT and an output OUTPUT using afirst connection node 24, such that the first inductive element 14 iselectrically coupled between the input INPUT and the first connectionnode 24, and the second inductive element 16 is electrically coupledbetween the output OUTPUT and the first connection node 24. The secondgroup 18 of inductive elements is cascaded in series using multipleconnection nodes, such that the third inductive element 20 iselectrically coupled between a second connection node 26 and a thirdconnection node 28, and the fourth inductive element 22 is electricallycoupled between a fourth connection node 30 and the third connectionnode 28.

The first RF impedance translation circuit 10 includes a group ofswitching elements that are capable of electrically coupling the firstgroup 12 of inductive elements to the second group 18 of inductiveelements. Specifically, a first switching element 32 is electricallycoupled between the second connection node 26 and the input INPUT, asecond switching element 34 is electrically coupled between the firstconnection node 24 and the third connection node 28, and a thirdswitching element 36 is electrically coupled between the fourthconnection node 30 and the output OUTPUT.

Further, the first RF impedance translation circuit 10 includes at leastone variable shunt capacitance circuit electrically coupled between acommon reference CREF and at least one connection node in the first RFimpedance translation circuit 10. Specifically, the first RF impedancetranslation circuit 10 includes a first variable shunt capacitancecircuit 38 electrically coupled between the common reference CREF andthe input INPUT, a second variable shunt capacitance circuit 40electrically coupled between the common reference CREF and the firstconnection node 24, a third variable shunt capacitance circuit 42electrically coupled between the common reference CREF and the outputOUTPUT, a fourth variable shunt capacitance circuit 44 electricallycoupled between the common reference CREF and the second connection node26, a fifth variable shunt capacitance circuit 46 electrically coupledbetween the common reference CREF and the third connection node 28, anda sixth variable shunt capacitance circuit 48 electrically coupledbetween the common reference CREF and the fourth connection node 30.

Additionally, the first RF impedance translation circuit 10 includescontrol circuitry 50, which provides a first switch control signal SCS₁to the first switching element 32, a second switch control signal SCS₁to the second switching element 34, a third switch control signal SCS₃to the third switching element 36, a first capacitance control signalCCS₁ to the first variable shunt capacitance circuit 38, a secondcapacitance control signal CCS₂ to the second variable shunt capacitancecircuit 40, a third capacitance control signal CCS₃ to the thirdvariable shunt capacitance circuit 42, a fourth capacitance controlsignal CCS₄ to the fourth variable shunt capacitance circuit 44, a fifthcapacitance control signal CCS₅ to the fifth variable shunt capacitancecircuit 46, and a sixth capacitance control signal CCS₆ to the sixthvariable shunt capacitance circuit 48.

By providing the appropriate first switch control signal SCS₁, secondswitch control signal SCS₂, and third switch control signal SCS₃, thecontrol circuitry 50 may select either an OFF state or an ON stateassociated with each of the first switching element 32, the secondswitching element 34, and the third switching element 36, respectively.When each ON state is selected, the first switching element 32electrically couples the second connection node 26 to the input INPUT,the second switching element 34 electrically couples the firstconnection node 24 to the third connection node 28, and the thirdswitching element 36 electrically couples the fourth connection node 30to the output OUTPUT. When each OFF state is selected, the firstswitching element 32 does not intentionally provide a conduction pathbetween the second connection node 26 and the input INPUT, the secondswitching element 34 does not intentionally provide a conduction pathbetween the first connection node 24 and the third connection node 28,and the third switching element 36 does not intentionally provide aconduction path between the fourth connection node 30 and the outputOUTPUT.

By providing the appropriate first capacitance control signal CCS₁,second capacitance control signal CCS₂, third capacitance control signalCCS₃, fourth capacitance control signal CCS₄, fifth capacitance controlsignal CCS₅, and sixth capacitance control signal CCS₅, the controlcircuitry 50 may select a desired capacitance associated with each ofthe first variable shunt capacitance circuit 38, the second variableshunt capacitance circuit 40, the third variable shunt capacitancecircuit 42, the fourth variable shunt capacitance circuit 44, the fifthvariable shunt capacitance circuit 46, and the sixth variable shuntcapacitance circuit 48, respectively. The first variable shuntcapacitance circuit 38 presents a selected capacitance between thecommon reference CREF and the input INPUT, the second variable shuntcapacitance circuit 40 presents a selected capacitance between thecommon reference CREF and the first connection node 24, the thirdvariable shunt capacitance circuit 42 presents a selected capacitancebetween the common reference CREF and the output OUTPUT, the fourthvariable shunt capacitance circuit 44 presents a selected capacitancebetween the common reference CREF and the second connection node 26, thefifth variable shunt capacitance circuit 46 presents a selectedcapacitance between the common reference CREF and the third connectionnode 28, and the sixth variable shunt capacitance circuit 48 presents aselected capacitance between the common reference CREF and the fourthconnection node 30.

A first impedance presented to the output OUTPUT may be translated intoa second impedance presented at the input INPUT based on the selectedcapacitances associated with each of the first, the second, the third,the fourth, the fifth, and the sixth variable shunt capacitance circuits38, 40, 42, 44, 46, 48 and the switching states of the first, thesecond, and the third switching elements 32, 34, 36. Further, impedancetranslation characteristics of the first RF impedance translationcircuit 10 may be based on the selected capacitances associated witheach of the first, the second, the third, the fourth, the fifth, and thesixth variable shunt capacitance circuits 38, 40, 42, 44, 46, 48 and theswitching states of the first, the second, and the third switchingelements 32, 34, 36. In general, the impedance translationcharacteristics of the first RE impedance translation circuit 10 may bebased on each capacitance control signal and on each switch controlsignal, and the first impedance presented to the output OUTPUT may betranslated into the second impedance presented at the input INPUT basedon each capacitance control signal and on each switch control signal.

In a first exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 1, one of the first switching element 32,the second switching element 34, and the third switching element 36, anda corresponding one of the first switch control signal SCS₁, the secondswitch control signal SCS₂, and the third switch control signal SCS₃ areomitted.

In a second exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 1, one of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, and the sixth variable shunt capacitance circuit 48, and acorresponding one of the first capacitance control signal CCS₁, thesecond capacitance control signal CCS₂, the third capacitance controlsignal CCS₃, the fourth capacitance control signal CCS₄, the fifthcapacitance control signal CCS₅, and the sixth capacitance controlsignal CCS₆ are omitted.

In a third exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 1, two of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, and the sixth variable shunt capacitance circuit 48, and acorresponding two of the first capacitance control signal CCS₁, thesecond capacitance control signal CCS₂, the third capacitance controlsignal CCS₃, the fourth capacitance control signal CCS₄, the fifthcapacitance control signal CCS₅, and the sixth capacitance controlsignal CCS₆ are omitted.

In a fourth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 1, three of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, and the sixth variable shunt capacitance circuit 48, and acorresponding three of the first capacitance control signal CCS₁, thesecond capacitance control signal CCS₂, the third capacitance controlsignal CCS₃, the fourth capacitance control signal CCS₄, the fifthcapacitance control signal CCS₅, and the sixth capacitance controlsignal CCS₆ are omitted.

In a fifth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 1, four of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, and the sixth variable shunt capacitance circuit 48, and acorresponding four of the first capacitance control signal CCS₁, thesecond capacitance control signal CCS₂, the third capacitance controlsignal CCS₃, the fourth capacitance control signal CCS₄, the fifthcapacitance control signal CCS₅, and the sixth capacitance controlsignal CCS₆ are omitted.

In a sixth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 1, five of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, and the sixth variable shunt capacitance circuit 48, and acorresponding five of the first capacitance control signal CCS₁, thesecond capacitance control signal CCS₂, the third capacitance controlsignal CCS₃, the fourth capacitance control signal CCS₄, the fifthcapacitance control signal CCS₅, and the sixth capacitance controlsignal CCS₆ are omitted. In one embodiment of the first RF impedancetranslation circuit 10 illustrated in FIG. 1, the common reference CREFis ground.

FIG. 2 shows a first portion 52 of the first RF impedance translationcircuit 10 according to an alternate embodiment of the first RFimpedance translation circuit 10. The first RF impedance translationcircuit 10 includes the first group 12 of inductive elements, whichincludes the first inductive element 14, the second inductive element16, and a fifth inductive element 54, the second group 18 of inductiveelements, which includes the third inductive element 20, the fourthinductive element 22, and a sixth inductive element 56, and a thirdgroup 58 of inductive elements, which includes a seventh inductiveelement 60, an eighth inductive element 62, and a ninth inductiveelement 64.

The first group 12 of inductive elements is cascaded in series betweenthe input INPUT and the output OUTPUT using the first connection node 24and a fifth connection node 66, such that the first inductive element 14is electrically coupled between the input INPUT and the first connectionnode 24, the second inductive element 16 is electrically coupled betweenthe first connection node 24 and the fifth connection node 66, and thefifth inductive element 54 is electrically coupled between the fifthconnection node 66 and the output OUTPUT. The second group 18 ofinductive elements is cascaded in series using multiple connectionnodes, such that the third inductive element 20 is electrically coupledbetween the second connection node 26 and the third connection node 28,the fourth inductive element 22 is electrically coupled between thethird connection node 28 and the fourth connection node 30, and thesixth inductive element 56 is electrically coupled between the fourthconnection node 30 and a sixth connection node 68. The third group 58 ofinductive elements is cascaded in series using multiple connectionnodes, such that the seventh inductive element 60 is electricallycoupled between a seventh connection node 70 and an eighth connectionnode 72, the eighth inductive element 62 is electrically coupled betweenthe eighth connection node 72 and a ninth connection node 74, and theninth inductive element 64 is electrically coupled between the ninthconnection node 74 and a tenth connection node 76.

The first RE impedance translation circuit 10 includes the group ofswitching elements that are capable of electrically coupling the firstgroup 12 of inductive elements to the second group 18 of inductiveelements and the first group 12 of inductive elements to the third group58 of inductive elements. Specifically, the first switching element 32is electrically coupled between the second connection node 26 and theinput INPUT, the second switching element 34 is electrically coupledbetween the third connection node 28 and the first connection node 24,the third switching element 36 is electrically coupled between thefourth connection node 30 and the fifth connection node 66, a fourthswitching element 78 is electrically coupled between the sixthconnection node 68 and the output OUTPUT, a fifth switching element 80is electrically coupled between the input INPUT and the seventhconnection node 70, a sixth switching element 82 is electrically coupledbetween the first connection node 24 and the eighth connection node 72,a seventh switching element 84 is electrically coupled between the fifthconnection node 66 and the ninth connection node 74, and an eighthswitching element 86 is electrically coupled between the output OUTPUTand the tenth connection node 76.

The first RF impedance translation circuit 10 includes multiple variableshunt capacitance circuits electrically coupled between ground andmultiple connection nodes in the first RF impedance translation circuit10. Specifically, the first RF impedance translation circuit 10 includesthe first variable shunt capacitance circuit 38 electrically coupledbetween ground and the input INPUT, the second variable shuntcapacitance circuit 40 electrically coupled between ground and the firstconnection node 24, the third variable shunt capacitance circuit 42electrically coupled between ground and the fifth connection node 66,the fourth variable shunt capacitance circuit 44 electrically coupledbetween ground and the second connection node 26, the fifth variableshunt capacitance circuit 46 electrically coupled between ground and thethird connection node 28, and the sixth variable shunt capacitancecircuit 48 electrically coupled between ground and the fourth connectionnode 30.

Further, the first RF impedance translation circuit 10 includes aseventh variable shunt capacitance circuit 88 electrically coupledbetween ground and the output OUTPUT, an eighth variable shuntcapacitance circuit 90 electrically coupled between ground and the sixthconnection node 68, a ninth variable shunt capacitance circuit 92electrically coupled between ground and the seventh connection node 70,a tenth variable shunt capacitance circuit 94 electrically coupledbetween ground and the eighth connection node 72, an eleventh variableshunt capacitance circuit 96 electrically coupled between ground and theninth connection node 74, and a twelfth variable shunt capacitancecircuit 98 electrically coupled between ground and the tenth connectionnode 76.

Additionally, the first RF impedance translation circuit 10 includescontrol circuitry 50 (not shown), which provides the first switchcontrol signal SCS₁ to the first switching element 32, the second switchcontrol signal SCS₂ to the second switching element 34, the third switchcontrol signal SCS₃ to the third switching element 36, a fourth switchcontrol signal SCS₄ to the fourth switching element 78, a fifth switchcontrol signal SCS₅ to the fifth switching element 80, a sixth switchcontrol signal SCS₈ to the sixth switching element 82, a seventh switchcontrol signal SCS₁ to the seventh switching element 84, and an eighthswitch control signal SCS₃ to the eighth switching element 86.

In addition, the control circuitry 50 (not shown) provides the firstcapacitance control signal CCS₁ to the first variable shunt capacitancecircuit 38, the second capacitance control signal CCS₂ to the secondvariable shunt capacitance circuit 40, the third capacitance controlsignal CCS₃ to the third variable shunt capacitance circuit 42, thefourth capacitance control signal CCS₄ to the fourth variable shuntcapacitance circuit 44, the fifth capacitance control signal CCS₅ to thefifth variable shunt capacitance circuit 46, the sixth capacitancecontrol signal CCS₆ to the sixth variable shunt capacitance circuit 48,a seventh capacitance control signal CCS₇ to the seventh variable shuntcapacitance circuit 88, an eighth capacitance control signal CCS₉ to theeighth variable shunt capacitance circuit 90, a ninth capacitancecontrol signal CCS₉ to the ninth variable shunt capacitance circuit 92,a tenth capacitance control signal CCS₁₀ to the tenth variable shuntcapacitance circuit 94, an eleventh capacitance control signal CCS₁₁ tothe eleventh variable shunt capacitance circuit 96, and a twelfthcapacitance control signal CCS₁₂ to the twelfth variable shuntcapacitance circuit 98.

By providing the appropriate first, second, third, fourth, fifth, sixth,seventh, and eighth switch control signals SCS₁, SCS₂, SCS₃, SCS₄, SCS₅,SCS₆, SCS₇, SCS₈, the control circuitry 50 (not shown) may select eitheran OFF state or an ON state associated with each of the first, thesecond, the third, the fourth, the fifth, the sixth, the seventh, andthe eighth switching elements 32, 34, 36, 78, 80, 82, 84, 86,respectively. When each ON state is selected, the first switchingelement 32 electrically couples the second connection node 26 to theinput INPUT, the second switching element 34 electrically couples thethird connection node 28 to the first connection node 24, the thirdswitching element 36 electrically couples the fourth connection node 30to the fifth connection node 66, the fourth switching element 78electrically couples the sixth connection node 68 to the output OUTPUT,the fifth switching element 80 electrically couples the input INPUT tothe seventh connection node 70, the sixth switching element 82electrically couples the first connection node 24 to the eighthconnection node 72, the seventh switching element 84 electricallycouples the fifth connection node 66 to the ninth connection node 74,and the eighth switching element 86 electrically couples the outputOUTPUT to the tenth connection node 76.

When each OFF state is selected, the first switching element 32 does notintentionally provide a conduction path between the second connectionnode 26 and the input INPUT, the second switching element 34 does notintentionally provide a conduction path between the first connectionnode 24 and the third connection node 28, the third switching element 36does not intentionally provide a conduction path between the fourthconnection node 30 and the fifth connection node 66, the fourthswitching element 78 does not intentionally provide a conduction pathbetween the sixth connection node 68 and the output OUTPUT, the fifthswitching element 80 does not intentionally provide a conduction pathbetween the input INPUT and the seventh connection node 70, the sixthswitching element 82 does not intentionally provide a conduction pathbetween the first connection node 24 and the eighth connection node 72,the seventh switching element 84 does not intentionally provide aconduction path between the fifth connection node 66 and the ninthconnection node 74, and the eighth switching element 86 does notintentionally provide a conduction path between the output OUTPUT andthe tenth connection node 76.

By providing the appropriate first, second, third, fourth, fifth, sixth,seventh, eighth, ninth, tenth, eleventh, and twelfth capacitance controlsignals CCS₁, CCS₂, CCS₃, CCS₄, CCS₅, CCS₆, CCS₇, CCS₈, CCS₉, CCS₁₀,CCS₁₁, CCS₁₂, the control circuitry 50 (not shown) may select a desiredcapacitance associated with each of the first, the second, the third,the fourth, the fifth, the sixth, the seventh, the eighth, the ninth,the tenth, the eleventh, and the twelfth variable shunt capacitancecircuits 38, 40, 42, 44, 46, 48, 88, 90, 92, 94, 96, 98, respectively.The first variable shunt capacitance circuit 38 presents a selectedcapacitance between ground and the input INPUT, the second variableshunt capacitance circuit 40 presents a selected capacitance betweenground and the first connection node 24, the third variable shuntcapacitance circuit 42 presents a selected capacitance between groundand the fifth connection node 66, the fourth variable shunt capacitancecircuit 44 presents a selected capacitance between ground and the secondconnection node 26, the fifth variable shunt capacitance circuit 46presents a selected capacitance between ground and the third connectionnode 28, the sixth variable shunt capacitance circuit 48 presents aselected capacitance between ground and the fourth connection node 30,the seventh variable shunt capacitance circuit 88 presents a selectedcapacitance between ground and the output OUTPUT, the eighth variableshunt capacitance circuit 90 presents a selected capacitance betweenground and the sixth connection node 68, the ninth variable shuntcapacitance circuit 92 presents a selected capacitance between groundand the seventh connection node 70, the tenth variable shunt capacitancecircuit 94 presents a selected capacitance between ground and the eighthconnection node 72, the eleventh variable shunt capacitance circuit 96presents a selected capacitance between ground and the ninth connectionnode 74, and the twelfth variable shunt capacitance circuit 98 presentsa selected capacitance between ground and the tenth connection node 76.

In a first exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 2, one of the first switching element 32,the second switching element 34, the third switching element 36, thefourth switching element 78, the fifth switching element 80, the sixthswitching element 82, the seventh switching element 84, and the eighthswitching element 86, and a corresponding one of the first switchcontrol signal SCS₁, the second switch control signal SCS₂, the thirdswitch control signal SCS₃, the fourth switch control signal SCS₄, thefifth switch control signal SCS₅, the sixth switch control signal SCS₆,the seventh switch control signal SCS₇, and the eighth switch controlsignal SCS₈, are omitted.

In a second exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 2, two of the first switching element 32,the second switching element 34, the third switching element 36, thefourth switching element 78, the fifth switching element 80, the sixthswitching element 82, the seventh switching element 84, and the eighthswitching element 86, and a corresponding two of the first switchcontrol signal SCS₁, the second switch control signal SCS₂, the thirdswitch control signal SCS₃, the fourth switch control signal SCS₄, thefifth switch control signal SCS₅, the sixth switch control signal SCS₆,the seventh switch control signal SCS₇, and the eighth switch controlsignal SCS₈, are omitted.

In a third exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 2, three of the first switching element32, the second switching element 34, the third switching element 36, thefourth switching element 78, the fifth switching element 80, the sixthswitching element 82, the seventh switching element 84, and the eighthswitching element 86, and a corresponding three of the first switchcontrol signal SCS₁, the second switch control signal SCS₂, the thirdswitch control signal SCS₃, the fourth switch control signal SCS₄, thefifth switch control signal SCS₅, the sixth switch control signal SCS₆,the seventh switch control signal SCS₇, and the eighth switch controlsignal SCS₈, are omitted.

In a fourth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 2, four of the first switching element32, the second switching element 34, the third switching element 36, thefourth switching element 78, the fifth switching element 80, the sixthswitching element 82, the seventh switching element 84, and the eighthswitching element 86, and a corresponding four of the first switchcontrol signal SCS₁, the second switch control signal SCS₂, the thirdswitch control signal SCS₃, the fourth switch control signal SCS₄, thefifth switch control signal SCS₅, the sixth switch control signal SCS₆,the seventh switch control signal SCS₇, and the eighth switch controlsignal SCS₃, are omitted.

In a fifth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 2, one of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, the sixth variable shunt capacitance circuit 48, the seventhvariable shunt capacitance circuit 88, the eighth variable shuntcapacitance circuit 90, the ninth variable shunt capacitance circuit 92,the tenth variable shunt capacitance circuit 94, the eleventh variableshunt capacitance circuit 96, and the twelfth variable shunt capacitancecircuit 98, and a corresponding one of the first capacitance controlsignal CCS₁, the second capacitance control signal CCS₂, the thirdcapacitance control signal CCS₃, the fourth capacitance control signalCCS₄, the fifth capacitance control signal CCS₅, the sixth capacitancecontrol signal CCS₆, the seventh capacitance control signal CCS₇, theeighth capacitance control signal CCS₈, the ninth capacitance controlsignal CCS₉, the tenth capacitance control signal CCS₁₀, the eleventhcapacitance control signal CCS₁₁, and the twelfth capacitance controlsignal CCS₁₂, are omitted.

In a sixth exemplary embodiment of the first RE impedance translationcircuit 10 illustrated in FIG. 2, two of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, the sixth variable shunt capacitance circuit 48, the seventhvariable shunt capacitance circuit 88, the eighth variable shuntcapacitance circuit 90, the ninth variable shunt capacitance circuit 92,the tenth variable shunt capacitance circuit 94, the eleventh variableshunt capacitance circuit 96, and the twelfth variable shunt capacitancecircuit 98, and a corresponding two of the first capacitance controlsignal CCS₁, the second capacitance control signal CCS₂, the thirdcapacitance control signal CCS₃, the fourth capacitance control signalCCS₄, the fifth capacitance control signal CCS₅, the sixth capacitancecontrol signal CCS₆, the seventh capacitance control signal CCS₇, theeighth capacitance control signal CCS₈, the ninth capacitance controlsignal CCS₈, the tenth capacitance control signal CCS₁₀, the eleventhcapacitance control signal CCS₁₁, and the twelfth capacitance controlsignal CCS₁₂, are omitted.

In a seventh exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 2, three of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, the sixth variable shunt capacitance circuit 48, the seventhvariable shunt capacitance circuit 88, the eighth variable shuntcapacitance circuit 90, the ninth variable shunt capacitance circuit 92,the tenth variable shunt capacitance circuit 94, the eleventh variableshunt capacitance circuit 96, and the twelfth variable shunt capacitancecircuit 98, and a corresponding three of the first capacitance controlsignal CCS₁, the second capacitance control signal CCS₂, the thirdcapacitance control signal CCS₃, the fourth capacitance control signalCCS₄, the fifth capacitance control signal CCS₅, the sixth capacitancecontrol signal CCS₆, the seventh capacitance control signal CCS₇, theeighth capacitance control signal CCS₈, the ninth capacitance controlsignal CCS₉, the tenth capacitance control signal CCS₁₀, the eleventhcapacitance control signal CCS₁₁, and the twelfth capacitance controlsignal CCS₁₂, are omitted.

In an eighth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 2, four of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, the sixth variable shunt capacitance circuit 48, the seventhvariable shunt capacitance circuit 88, the eighth variable shuntcapacitance circuit 90, the ninth variable shunt capacitance circuit 92,the tenth variable shunt capacitance circuit 94, the eleventh variableshunt capacitance circuit 96, and the twelfth variable shunt capacitancecircuit 98, and a corresponding four of the first capacitance controlsignal CCS₁, the second capacitance control signal CCS₂, the thirdcapacitance control signal CCS₃, the fourth capacitance control signalCCS₄, the fifth capacitance control signal CCS₅, the sixth capacitancecontrol signal CCS₆, the seventh capacitance control signal CCS₇, theeighth capacitance control signal CCS₈, the ninth capacitance controlsignal CCS₉, the tenth capacitance control signal CCS₁₀, the eleventhcapacitance control signal CCS₁₁, and the twelfth capacitance controlsignal CCS₁₂, are omitted.

In a ninth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 2, five of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, the sixth variable shunt capacitance circuit 48, the seventhvariable shunt capacitance circuit 88, the eighth variable shuntcapacitance circuit 90, the ninth variable shunt capacitance circuit 92,the tenth variable shunt capacitance circuit 94, the eleventh variableshunt capacitance circuit 96, and the twelfth variable shunt capacitancecircuit 98, and a corresponding five of the first capacitance controlsignal CCS₁, the second capacitance control signal CCS₂, the thirdcapacitance control signal CCS₃, the fourth capacitance control signalCCS₄, the fifth capacitance control signal CCS₅, the sixth capacitancecontrol signal CCS₆, the seventh capacitance control signal CCS₇, theeighth capacitance control signal CCS₈, the ninth capacitance controlsignal CCS₉, the tenth capacitance control signal CCS₁₀, the eleventhcapacitance control signal CCS₁₁, and the twelfth capacitance controlsignal CCS₁₂, are omitted.

In a tenth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 2, six of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, the sixth variable shunt capacitance circuit 48, the seventhvariable shunt capacitance circuit 88, the eighth variable shuntcapacitance circuit 90, the ninth variable shunt capacitance circuit 92,the tenth variable shunt capacitance circuit 94, the eleventh variableshunt capacitance circuit 96, and the twelfth variable shunt capacitancecircuit 98, and a corresponding six of the first capacitance controlsignal CCS₁, the second capacitance control signal CCS₂, the thirdcapacitance control signal CCS₃, the fourth capacitance control signalCCS₄, the fifth capacitance control signal CCS₅, the sixth capacitancecontrol signal CCS₆, the seventh capacitance control signal CCS₇, theeighth capacitance control signal CCS₈, the ninth capacitance controlsignal CCS₉, the tenth capacitance control signal CCS₁₀, the eleventhcapacitance control signal CCS₁₁, and the twelfth capacitance controlsignal CCS₁₂, are omitted.

In an eleventh exemplary embodiment of the first RF impedancetranslation circuit 10 illustrated in FIG. 2, seven of the firstvariable shunt capacitance circuit 38, the second variable shuntcapacitance circuit 40, the third variable shunt capacitance circuit 42,the fourth variable shunt capacitance circuit 44, the fifth variableshunt capacitance circuit 46, the sixth variable shunt capacitancecircuit 48, the seventh variable shunt capacitance circuit 88, theeighth variable shunt capacitance circuit 90, the ninth variable shuntcapacitance circuit 92, the tenth variable shunt capacitance circuit 94,the eleventh variable shunt capacitance circuit 96, and the twelfthvariable shunt capacitance circuit 98, and a corresponding seven of thefirst capacitance control signal CCS₁, the second capacitance controlsignal CCS₂, the third capacitance control signal CCS₃, the fourthcapacitance control signal CCS₄, the fifth capacitance control signalCCS₅, the sixth capacitance control signal CCS₆, the seventh capacitancecontrol signal CCS₇, the eighth capacitance control signal CCS₈, theninth capacitance control signal CCS₉, the tenth capacitance controlsignal CCS₁₀, the eleventh capacitance control signal CCS₁₁, and thetwelfth capacitance control signal CCS₁₂, are omitted.

In a twelfth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 2, eight of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, the sixth variable shunt capacitance circuit 48, the seventhvariable shunt capacitance circuit 88, the eighth variable shuntcapacitance circuit 90, the ninth variable shunt capacitance circuit 92,the tenth variable shunt capacitance circuit 94, the eleventh variableshunt capacitance circuit 96, and the twelfth variable shunt capacitancecircuit 98, and a corresponding eight of the first capacitance controlsignal CCS₁, the second capacitance control signal CCS₂, the thirdcapacitance control signal CCS₃, the fourth capacitance control signalCCS₄, the fifth capacitance control signal CCS₅, the sixth capacitancecontrol signal CCS₆, the seventh capacitance control signal CCS₇, theeighth capacitance control signal CCS₈, the ninth capacitance controlsignal CCS₉, the tenth capacitance control signal CCS₁₀, the eleventhcapacitance control signal CCS₁₁, and the twelfth capacitance controlsignal CCS₁₂, are omitted.

In a thirteenth exemplary embodiment of the first RF impedancetranslation circuit 10 illustrated in FIG. 2, nine of the first variableshunt capacitance circuit 38, the second variable shunt capacitancecircuit 40, the third variable shunt capacitance circuit 42, the fourthvariable shunt capacitance circuit 44, the fifth variable shuntcapacitance circuit 46, the sixth variable shunt capacitance circuit 48,the seventh variable shunt capacitance circuit 88, the eighth variableshunt capacitance circuit 90, the ninth variable shunt capacitancecircuit 92, the tenth variable shunt capacitance circuit 94, theeleventh variable shunt capacitance circuit 96, and the twelfth variableshunt capacitance circuit 98, and a corresponding nine of the firstcapacitance control signal CCS₁, the second capacitance control signalCCS₂, the third capacitance control signal CCS₃, the fourth capacitancecontrol signal CCS₄, the fifth capacitance control signal CCS₅, thesixth capacitance control signal CCS₆, the seventh capacitance controlsignal CCS₇, the eighth capacitance control signal CCS₈, the ninthcapacitance control signal CCS₉, the tenth capacitance control signalCCS₁₀, the eleventh capacitance control signal CCS₁₁, and the twelfthcapacitance control signal CCS₁₂, are omitted.

In an alternate embodiment of the first RF impedance translation circuit10 illustrated in FIG. 2, the common reference CREF is used instead ofground.

FIG. 3 shows a second portion 100 of the first RF impedance translationcircuit 10 illustrated in FIG. 2. The second portion 100 of the first RFimpedance translation circuit 10 includes the control circuitry 50,which provides the first, second, third, fourth, fifth, sixth, seventh,and eighth switch control signals SCS₁, SCS₂, SCS₃, SCS₄, SCS₅, SCS₆,SCS₇, SCS₈ and the first, second, third, fourth, fifth, sixth, seventh,eighth, ninth, tenth, eleventh, and twelfth capacitance control signalsCCS₁, CCS₂, CCS₃, CCS₄, CCS₅, CCS₆, CCS₇, CCS₈, CCS₉, CCS₁₀, CCS₁₁,CCS₁₂.

FIG. 4 shows the first portion 52 of the first RF impedance translationcircuit 10 according to an additional embodiment of the first RFimpedance translation circuit 10. The first RF impedance translationcircuit 10 includes the first group 12 of inductive elements, whichincludes the first inductive element 14, the second inductive element16, and up to and including an Nth inductive element 102, the secondgroup 18 of inductive elements, which includes an N+1 inductive element104, an N+2 inductive element 106, and up to and including a 2Nthinductive element 108, and up to and including an Mth group 110 ofinductive elements, which includes an N(M−1)+1 inductive element 112, anN(M−1)+2 inductive element 114, and up to and including an MNthinductive element 116.

The first group 12 of inductive elements is cascaded in series betweenthe input INPUT and the output OUTPUT using the first connection node24, the fifth connection node 66, and additional connection nodes asneeded, such that the first inductive element 14 is electrically coupledbetween the input INPUT and the first connection node 24, the secondinductive element 16 is electrically coupled between the firstconnection node 24 and another connection node (not shown), and the Nthinductive element 102 is electrically coupled between the fifthconnection node 66 and the output OUTPUT. The second group 18 ofinductive elements is cascaded in series using multiple connectionnodes, such that the N÷1 inductive element 104 is electrically coupledbetween the second connection node 26 and the third connection node 28,the N+2 inductive element 106 is electrically coupled between the thirdconnection node 28 and another connection node (not shown), and the 2Nthinductive element 108 is electrically coupled between the fourthconnection node 30 and the sixth connection node 68. The Mth group 110of inductive elements is cascaded in series using multiple connectionnodes, such that the N(M−1)+1 inductive element 112 is electricallycoupled between the seventh connection node 70 and the eighth connectionnode 72, the N(M−1)+2 inductive element 114 is electrically coupledbetween the eighth connection node 72 and another connection node (notshown), and the MNth inductive element 116 is electrically coupledbetween the ninth connection node 74 and the tenth connection node 76.

The first RF impedance translation circuit 10 includes the group ofswitching elements that are capable of electrically coupling the firstgroup 12 of inductive elements to the second group 18 of inductiveelements and the first group 12 of inductive elements up to andincluding the Mth group 110 of inductive elements. The first group 12may be electrically coupled to each of the groups of inductive elementsup to and including the Mth group 110 of inductive elements eitherdirectly or indirectly using at least one other group of inductiveelements. Specifically, the first switching element 32 is electricallycoupled between the second connection node 26 and the input INPUT, thesecond switching element 34 is electrically coupled between the thirdconnection node 28 and the first connection node 24, the third switchingelement 36 is electrically coupled between the fourth connection node 30and the fifth connection node 66, the fourth switching element 78 iselectrically coupled between the sixth connection node 68 and the outputOUTPUT, the fifth switching element 80 is electrically coupled betweenthe input INPUT and the seventh connection node 70, the sixth switchingelement 82 is electrically coupled between the first connection node 24and the eighth connection node 72, the seventh switching element 84 iselectrically coupled between the fifth connection node 66 and the ninthconnection node 74, and the eighth switching element 86 is electricallycoupled between the output OUTPUT and the tenth connection node 76.Additional switching elements (not shown) may be added as needed.

The first RF impedance translation circuit 10 includes multiple variableshunt capacitance circuits electrically coupled between ground andmultiple connection nodes in the first RF impedance translation circuit10. Specifically, the first RF impedance translation circuit 10 includesthe first variable shunt capacitance circuit 38 electrically coupledbetween ground and the input INPUT, the second variable shuntcapacitance circuit 40 electrically coupled between ground and the firstconnection node 24, the third variable shunt capacitance circuit 42electrically coupled between ground and the fifth connection node 66,the fourth variable shunt capacitance circuit 44 electrically coupledbetween ground and the second connection node 26, the fifth variableshunt capacitance circuit 46 electrically coupled between ground and thethird connection node 28, and the sixth variable shunt capacitancecircuit 48 electrically coupled between ground and the fourth connectionnode 30.

Further, the first RE impedance translation circuit 10 includes theseventh variable shunt capacitance circuit 88 electrically coupledbetween ground and the output OUTPUT, the eighth variable shuntcapacitance circuit 90 electrically coupled between ground and the sixthconnection node 68, the ninth variable shunt capacitance circuit 92electrically coupled between ground and the seventh connection node 70,the tenth variable shunt capacitance circuit 94 electrically coupledbetween ground and the eighth connection node 72, the eleventh variableshunt capacitance circuit 96 electrically coupled between ground and theninth connection node 74, and the twelfth variable shunt capacitancecircuit 98 electrically coupled between ground and the tenth connectionnode 76. Additional variable shunt capacitance circuits (not shown) maybe added as needed.

Additionally, the first RF impedance translation circuit 10 includes thecontrol circuitry 50 (not shown), which provides the first switchcontrol signal SCS₁ to the first switching element 32, the second switchcontrol signal SCS₂ to the second switching element 34, the third switchcontrol signal SCS₃ to the third switching element 36, the fourth switchcontrol signal SCS₄ to the fourth switching element 78, the fifth switchcontrol signal SCS₅ to the fifth switching element 80, the sixth switchcontrol signal SCS₆ to the sixth switching element 82, the seventhswitch control signal SCS₇ to the seventh switching element 84, and theeighth switch control signal SCS₈ to the eighth switching element 86.Additional switch control signals (not shown) may be added to controlany additional switching elements (not shown) that are added as needed.

In addition, the control circuitry 50 (not shown) provides the firstcapacitance control signal CCS₁ to the first variable shunt capacitancecircuit 38, the second capacitance control signal CCS₂ to the secondvariable shunt capacitance circuit 40, the third capacitance controlsignal CCS₃ to the third variable shunt capacitance circuit 42, thefourth capacitance control signal CCS₄ to the fourth variable shuntcapacitance circuit 44, the fifth capacitance control signal CCS₅ to thefifth variable shunt capacitance circuit 46, the sixth capacitancecontrol signal CCS₆ to the sixth variable shunt capacitance circuit 48,the seventh capacitance control signal CCS₇ to the seventh variableshunt capacitance circuit 88, the eighth capacitance control signal CCS₈to the eighth variable shunt capacitance circuit 90, the ninthcapacitance control signal CCS₉ to the ninth variable shunt capacitancecircuit 92, the tenth capacitance control signal CCS₁₀ to the tenthvariable shunt capacitance circuit 94, the eleventh capacitance controlsignal CCS₁₁ to the eleventh variable shunt capacitance circuit 96, andthe twelfth capacitance control signal CCS₁₂ to the twelfth variableshunt capacitance circuit 98. Additional capacitance control signals(not shown) may be added to control any additional variable shuntcapacitance circuit (not shown) that are added as needed.

By providing the appropriate first, second, third, fourth, fifth, sixth,seventh, and eighth switch control signals SCS₁, SCS₂, SCS₃, SCS₄, SCS₅,SCS₆, SCS₇, SCS₈, the control circuitry 50 (not shown) may select eitheran OFF state or an ON state associated with each of the first, thesecond, the third, the fourth, the fifth, the sixth, the seventh, andthe eighth switching elements 32, 34, 36, 78, 80, 82, 84, 86,respectively. When each ON state is selected, the first switchingelement 32 electrically couples the second connection node 26 to theinput INPUT, the second switching element 34 electrically couples thefirst connection node 24 to the third connection node 28, the thirdswitching element 36 electrically couples the fourth connection node 30to the fifth connection node 66, the fourth switching element 78electrically couples the sixth connection node 68 to the output OUTPUT,the fifth switching element 80 electrically couples the input INPUT tothe seventh connection node 70, the sixth switching element 82electrically couples the first connection node 24 to the eighthconnection node 72, the seventh switching element 84 electricallycouples the fifth connection node 66 to the ninth connection node 74,and the eighth switching element 86 electrically couples the outputOUTPUT to the tenth connection node 76. When each OFF state is selected,the first switching element 32 does not intentionally provide aconduction path between the second connection node 26 and the inputINPUT, the second switching element 34 does not intentionally provide aconduction path between the first connection node 24 and the thirdconnection node 28, the third switching element 36 does notintentionally provide a conduction path between the fourth connectionnode 30 and the fifth connection node 66, the fourth switching element78 does not intentionally provide a conduction path between the sixthconnection node 68 and the output OUTPUT, the fifth switching element 80does not intentionally provide a conduction path between the input INPUTand the seventh connection node 70, the sixth switching element 82 doesnot intentionally provide a conduction path between the first connectionnode 24 and the eighth connection node 72, the seventh switching element84 does not intentionally provide a conduction path between the fifthconnection node 66 and the ninth connection node 74, and the eighthswitching element 86 does not intentionally provide a conduction pathbetween the output OUTPUT and the tenth connection node 76.

By providing the appropriate first, second, third, fourth, fifth, sixth,seventh, eighth, ninth, tenth, eleventh, and twelfth capacitance controlsignals CCS₁, CCS₂, CCS₃, CCS₄, CCS₅, CCS₆, CCS₇, CCS₈, CCS₉, CCS₁₀,CCS₁₁, CCS₁₂, the control circuitry 50 (not shown) may select a desiredcapacitance associated with each of the first, the second, the third,the fourth, the fifth, the sixth, the seventh, the eighth, the ninth,the tenth, the eleventh, and the twelfth variable shunt capacitancecircuits 38, 40, 42, 44, 46, 48, 88, 90, 92, 94, 96, 98, respectively.The first variable shunt capacitance circuit 38 presents a selectedcapacitance between ground and the input INPUT, the second variableshunt capacitance circuit 40 presents a selected capacitance betweenground and the first connection node 24, the third variable shuntcapacitance circuit 42 presents a selected capacitance between groundand the fifth connection node 66, the fourth variable shunt capacitancecircuit 44 presents a selected capacitance between ground and the secondconnection node 26, the fifth variable shunt capacitance circuit 46presents a selected capacitance between ground and the third connectionnode 28, the sixth variable shunt capacitance circuit 48 presents aselected capacitance between ground and the fourth connection node 30,the seventh variable shunt capacitance circuit 88 presents a selectedcapacitance between ground and the output OUTPUT, the eighth variableshunt capacitance circuit 90 presents a selected capacitance betweenground and the sixth connection node 68, the ninth variable shuntcapacitance circuit 92 presents a selected capacitance between groundand the seventh connection node 70, the tenth variable shunt capacitancecircuit 94 presents a selected capacitance between ground and the eighthconnection node 72, the eleventh variable shunt capacitance circuit 96presents a selected capacitance between ground and the ninth connectionnode 74, and the twelfth variable shunt capacitance circuit 98 presentsa selected capacitance between ground and the tenth connection node 76.

In a first exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 4, N=3. In a second exemplary embodimentof the first RF impedance translation circuit 10 illustrated in FIG. 4,N=4. In a third exemplary embodiment of the first RF impedancetranslation circuit 10 illustrated in FIG. 4, N=5. In a fourth exemplaryembodiment of the first RF impedance translation circuit 10 illustratedin FIG. 4, N=6. In a fifth exemplary embodiment of the first RFimpedance translation circuit 10 illustrated in FIG. 4, N=7. In a sixthexemplary embodiment of the first RF impedance translation circuit 10illustrated in FIG. 4, N=8. In a seventh exemplary embodiment of thefirst RF impedance translation circuit 10 illustrated in FIG. 4, N=9. Inan eighth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 4, N=10. In a ninth exemplary embodimentof the first RE impedance translation circuit 10 illustrated in FIG. 4,N=11. In a tenth exemplary embodiment of the first RE impedancetranslation circuit 10 illustrated in FIG. 4, N=12. In an eleventhexemplary embodiment of the first RF impedance translation circuit 10illustrated in FIG. 4, N=13. In a twelfth exemplary embodiment of thefirst RF impedance translation circuit 10 illustrated in FIG. 4, N=14.In a thirteenth exemplary embodiment of the first RF impedancetranslation circuit 10 illustrated in FIG. 4, N=15. In a fourteenthexemplary embodiment of the first RF impedance translation circuit 10illustrated in FIG. 4, N=16. In a fifteenth exemplary embodiment of thefirst RF impedance translation circuit 10 illustrated in FIG. 4, N=17.In a sixteenth exemplary embodiment of the first RF impedancetranslation circuit 10 illustrated in FIG. 4, N=18. In a seventeenthexemplary embodiment of the first RF impedance translation circuit 10illustrated in FIG. 4, N=19. In an eighteenth exemplary embodiment ofthe first RF impedance translation circuit 10 illustrated in FIG. 4,N=20. In a nineteenth exemplary embodiment of the first RF impedancetranslation circuit 10 illustrated in FIG. 4, N=21. In a twentiethexemplary embodiment of the first RF impedance translation circuit 10illustrated in FIG. 4, N=22. In a twenty-first exemplary embodiment ofthe first RF impedance translation circuit 10 illustrated in FIG. 4, Nis greater than 22.

In a twenty-second exemplary embodiment of the first RF impedancetranslation circuit 10 illustrated in FIG. 4, the Mth group 110 ofinductive elements is omitted. In a twenty-third exemplary embodiment ofthe first RF impedance translation circuit 10 illustrated in FIG. 4,M=3. In a twenty-fourth exemplary embodiment of the first RF impedancetranslation circuit 10 illustrated in FIG. 4, M=4. In a twenty-fifthexemplary embodiment of the first RF impedance translation circuit 10illustrated in FIG. 4, M=5. In a twenty-sixth exemplary embodiment ofthe first RF impedance translation circuit 10 illustrated in FIG. 4,M=6. In a twenty-seventh exemplary embodiment of the first RF impedancetranslation circuit 10 illustrated in FIG. 4, M=7. In a twenty-eighthexemplary embodiment of the first RF impedance translation circuit 10illustrated in FIG. 4, M=8. In a twenty-ninth exemplary embodiment ofthe first RF impedance translation circuit 10 illustrated in FIG. 4,M=9. In a thirtieth exemplary embodiment of the first RF impedancetranslation circuit 10 illustrated in FIG. 4, M is greater than nine.

Any or all of the first, the second, the third, the fourth, the fifth,the sixth, the seventh, the eighth, the ninth, the tenth, the eleventh,the twelfth, the thirteenth, the fourteenth, the fifteenth, thesixteenth, the seventeenth, the eighteenth, the nineteenth, thetwentieth, and the twenty-first exemplary embodiments of the first RFimpedance translation circuit 10 illustrated in FIG. 4 may be combinedwith any or all of the twenty-second, the twenty-third, thetwenty-fourth, the twenty-fifth, the twenty-sixth, the twenty-seventh,the twenty-eighth, the twenty-ninth, and the thirtieth exemplaryembodiments of the first RF impedance translation circuit 10 illustratedin FIG. 4. By increasing the value of M, N, or both, a larger number ofadjustment options is provided, thereby increasing the flexibility ofthe first RF impedance translation circuit 10. Further, increasing thevalue of M, N, or both, increases the number of connection nodes.Therefore, the number of switching elements, the number of variableshunt capacitance circuits, or both, and their respective controlsignals, may need to be increased accordingly.

FIG. 5 shows details of the first RF impedance translation circuit 10illustrated in FIG. 1 according to an exemplary embodiment of the firstRF impedance translation circuit 10. The first inductive element 14includes a first discrete inductive element L1 electrically coupledbetween the input INPUT and the first connection node 24, and the secondinductive element 16 includes a second discrete inductive element L2electrically coupled between the output OUTPUT and the first connectionnode 24. The third inductive element 20 includes a third discreteinductive element L3 electrically coupled between the second connectionnode 26 and the third connection node 28, and the fourth inductiveelement 22 includes a fourth discrete inductive element L4 electricallycoupled between the third connection node 28 and the fourth connectionnode 30.

The first variable shunt capacitance circuit 38 includes a firstcapacitance switching element 118 and a first switched capacitiveelement C1 electrically coupled in series between the common referenceCREF and the input INPUT. The second variable shunt capacitance circuit40 includes a second capacitance switching element 120 and a secondswitched capacitive element C2 electrically coupled in series betweenthe common reference CREF and the first connection node 24. The thirdvariable shunt capacitance circuit 42 includes a third capacitanceswitching element 122 and a third switched capacitive element C3electrically coupled in series between the common reference CREF and theoutput OUTPUT. The fourth variable shunt capacitance circuit 44 includesa fourth capacitance switching element 124 and a fourth switchedcapacitive element C4 electrically coupled in series between the commonreference CREF and the second connection node 26. The fifth variableshunt capacitance circuit 46 includes a fifth capacitance switchingelement 126 and a fifth switched capacitive element C5 electricallycoupled in series between the common reference CREF and the thirdconnection node 28. The sixth variable shunt capacitance circuit 48includes a sixth capacitance switching element 128 and a sixth switchedcapacitive element C6 electrically coupled in series between the commonreference CREF and the fourth connection node 30.

By providing the appropriate first, second, third, fourth, fifth, andsixth capacitance control signals CCS₁, CCS₂, CCS₃, CCS₄, CCS₅, CCS₆,the control circuitry 50 (not shown) may select either an OFF state oran ON state associated with each of the first, the second, the third,the fourth, the fifth, and the sixth capacitance switching elements 118,120, 122, 124, 126, 128, respectively. When each ON state is selected,the first capacitance switching element 118 electrically couples thefirst switched capacitive element C1 between the input INPUT and thecommon reference CREF, the second capacitance switching element 120electrically couples the second switched capacitive element C2 betweenthe first connection node 24 and the common reference CREF, the thirdcapacitance switching element 122 electrically couples the thirdswitched capacitive element C3 between the output OUTPUT and the commonreference CREF, the fourth capacitance switching element 124electrically couples the fourth switched capacitive element C4 betweenthe second connection node 26 and the common reference CREF, the fifthcapacitance switching element 126 electrically couples the fifthswitched capacitive element C5 between the third connection node 28 andthe common reference CREF, and the sixth capacitance switching element128 electrically couples the sixth switched capacitive element C6between the fourth connection node 30 and the common reference CREF.

When each OFF state is selected, the first switched capacitive elementC1 is not electrically coupled between the input INPUT and the commonreference CREF, the second switched capacitive element C2 is notelectrically coupled between the first connection node 24 and the commonreference CREF, the third switched capacitive element C3 is notelectrically coupled between the output OUTPUT and the common referenceCREF, the fourth switched capacitive element C4 is not electricallycoupled between the second connection node 26 and the common referenceCREF, the fifth switched capacitive element C5 is not electricallycoupled between the third connection node 28 and the common referenceCREF, and the sixth switched capacitive element C6 is not electricallycoupled between the fourth connection node 30 and the common referenceCREF.

FIGS. 6A and 6B show details of the first inductive element 14 accordingto one embodiment of the first inductive element 14. FIG. 6A shows thefirst inductive element 14, which includes a transmission line segment130. A first section AA identifies a cross-section of the firstinductive element 14. FIG. 6B shows details of the first section AA,which includes a supporting structure 132, a ground plane 134 over thesupporting structure 132, a first dielectric layer 136 over the groundplane 134 and a printed circuit board (PCB) trace 138 over the firstdielectric layer 136. The transmission line segment 130 includes theground plane 134, the first dielectric layer 136, and the PCB trace 138.Alternate embodiments of the transmission line segment 130 may includeco-axial cable, twin-lead, parallel conductive elements, or the like.Any or all of the first, the second, the third, the fourth, the fifth,the sixth, the seventh, the eighth, the ninth, the Nth, the N+1, theN+2, the 2N, the N(M−1)+1, the N(M−1)+2, and the MNth inductive elements14, 16, 20, 22, 54, 56, 60, 62, 64, 102, 104, 106, 108, 112, 114, 116may each include a transmission line segment 130.

FIGS. 7A and 7B show details of the first inductive element 14 accordingto an alternate embodiment of the first inductive element 14. FIG. 7Ashows the first inductive element 14, which includes a spiraltransmission line segment 140. A second section BB identifies across-section of the first inductive element 14. FIG. 7B shows detailsof the second section BB, which includes the supporting structure 132,the ground plane 134 over the supporting structure 132, the firstdielectric layer 136 over the ground plane 134, a spiral PCB trace 142over the first dielectric layer 136, a second dielectric layer 144 overthe spiral PCB trace 142, and a bridging PCB trace 146 over the seconddielectric layer 144. The bridging PCB trace 146 crosses over the spiralPCB trace 142 and is electrically coupled to the spiral PCB trace 142using via holes 148. The spiral transmission line segment 140 includesthe ground plane 134, the first dielectric layer 136, the spiral PCBtrace 142, the second dielectric layer 144, and the bridging PCB trace146. The spiral shape of the spiral PCB trace 142 may increaseinductance of the spiral transmission line segment 140 compared to thetransmission line segment 130. Any or all of the first, the second, thethird, the fourth, the fifth, the sixth, the seventh, the eighth, theninth, the Nth, the the N+2, the 2Nth, the N(M−1)+1, the N(M−1)+2, andthe MNth inductive elements 14, 16, 20, 22, 54, 56, 60, 62, 64, 102,104, 106, 108, 112, 114, 116 may each include a transmission linesegment 130.

FIGS. 8A and 8B show details of the first inductive element 14 accordingto an additional embodiment of the first inductive element 14. FIG. 8Ashows the first inductive element 14, which includes a spiral PCBsegment 150. A third section CC identifies a cross-section of the firstinductive element 14. FIG. 8B shows details of the third section CC,which includes the supporting structure 132, the spiral PCB trace 142over the supporting structure 132, the first dielectric layer 136 overthe spiral PCB trace 142, and the bridging PCB trace 146 over the firstdielectric layer 136. The bridging PCB trace 146 crosses over the spiralPCB trace 142 and is electrically coupled to the spiral PCB trace 142using via holes 148. The spiral PCB segment 150 includes the firstdielectric layer 136, the spiral PCB trace 142, and the bridging PCBtrace 146. The spiral shape of the spiral PCB trace 142 may increaseinductance of the spiral PCB segment 150 and other PCB segments (notshown). Any or all of the first, the second, the third, the fourth, thefifth, the sixth, the seventh, the eighth, the ninth, the Nth, the N+1,the N+2, the 2Nth, the N(M−1)+1, the N(M−1)+2, and the MNth inductiveelements 14, 16, 20, 22, 54, 56, 60, 62, 64, 102, 104, 106, 108, 112,114, 116 may each include a transmission line segment 130.

FIG. 9 shows details of the first variable shunt capacitance circuit 38according to one embodiment of the first variable shunt capacitancecircuit 38. The first variable shunt capacitance circuit 38 includes amultiple capacitive element circuit 152, which includes a first multiplecapacitive element 154, a second multiple capacitive element 156, afirst multiple switching element 158, a second multiple switchingelement 160, and a multiple switch control circuit 162. The firstmultiple capacitive element 154 and the first multiple switching element158 are electrically coupled in series. Similarly, the second multiplecapacitive element 156 and the second multiple switching element 160 areelectrically coupled in series and then coupled in parallel with theseries coupled first multiple capacitive element 154 and first multipleswitching element 158.

The multiple switch control circuit 162 receives the first capacitancecontrol signal CCS₁ and provides a first multiple switch control signalSCS_(1M) and a second multiple switch control signal SCS_(2M) to thefirst multiple switching element 158 and the second multiple switchingelement 160, respectively, based on the first capacitance control signalCCS₁. The multiple switch control circuit 162 may select either an ONstate or an OFF state associated with each of the first and the secondmultiple switching elements 158, 160 to include or exclude the first andthe second multiple capacitive elements 154, 156, respectively, fromcontributing to the capacitance of the multiple capacitive elementcircuit 152. Any or all of the first, the second, the third, the fourth,the fifth, the sixth, the seventh, the eighth, the ninth, the tenth, theeleventh, and the twelfth variable shunt capacitance circuits 38, 40,42, 44, 46, 48, 88, 90, 92, 94, 96, 98 may each include a multiplecapacitive element circuit 152.

FIG. 10 shows details of the first variable shunt capacitance circuit 38according to an alternate embodiment of the first variable shuntcapacitance circuit 38. The first variable shunt capacitance circuit 38includes the multiple capacitive element circuit 152, which includes thefirst multiple capacitive element 154, the second multiple capacitiveelement 156, up to and including a Pth multiple capacitive element 164,the first multiple switching element 158, the second multiple switchingelement 160, up to and including a Pth multiple switching element 166,and the multiple switch control circuit 162. The first multiplecapacitive element 154 and the first multiple switching element 158 areelectrically coupled in series. Similarly, the second multiplecapacitive element 156 and the second multiple switching element 160 areelectrically coupled in series. Further, the Pth multiple capacitiveelement 164 and the Pth multiple switching element 166 are electricallycoupled in series. The series coupled elements are then coupled inparallel.

The multiple switch control circuit 162 receives the first capacitancecontrol signal CCS₁ and provides the first multiple switch controlsignal SCS_(1M), the second multiple switch control signal SCS_(2M), andup to and including a Pth multiple switch control signal SCS_(PM) to thefirst multiple switching element 158, the second multiple switchingelement 160, and up to and including the Pth multiple switching element166, respectively, based on the first capacitance control signal CCS₁.The multiple switch control circuit 162 may select either an ON state oran OFF state associated with each of the first, the second, and up toand including the Pth multiple switching elements 158, 160, 166 toinclude or exclude the first, the second, and up to and including thePth multiple capacitive elements 154, 156, 164, respectively, fromcontributing to the capacitance of the multiple capacitive elementcircuit 152. Any or all of the first, the second, the third, the fourth,the fifth, the sixth, the seventh, the eighth, the ninth, the tenth, theeleventh, and the twelfth variable shunt capacitance circuits 38, 40,42, 44, 46, 48, 88, 90, 92, 94, 96, 98 may each include a multiplecapacitive element circuit 152.

FIG. 11 shows details of the first variable shunt capacitance circuit 38according to an additional embodiment of the first variable shuntcapacitance circuit 38. The first variable shunt capacitance circuit 38includes a varactor diode circuit 168, which includes a varactor diode170 and a varactor diode bias control circuit 172. The varactor diodebias control circuit 172 receives the first capacitance control signalCCS₁ and provides a first DC bias voltage DCBV₁ and a second DC biasvoltage DCBV₂ based on the first capacitance control signal CCS₁. Thevaractor diode 170 provides capacitance for the varactor diode circuit168 based on a DC bias voltage across the varactor diode 170, which isthe difference between the first DC bias voltage DCBV₁ and the second DCbias voltage DCBV₂. Any or all of the first, the second, the third, thefourth, the fifth, the sixth, the seventh, the eighth, the ninth, thetenth, the eleventh, and the twelfth variable shunt capacitance circuits38, 40, 42, 44, 46, 48, 88, 90, 92, 94, 96, 98 may each include avaractor diode circuit 168.

FIG. 12A shows one embodiment of the first RF impedance translationcircuit 10. The input INPUT of the first RF impedance translationcircuit 10 receives an RF input signal RF_(IN) and the output OUTPUT ofthe first RF impedance translation circuit 10 provides an RF outputsignal RF_(OUT) based on the RF input signal RF_(IN).

FIG. 12B shows the first RF impedance translation circuit 10 illustratedin FIG. 12A used with a common power amplifier 174 according to oneembodiment of the present invention. The common power amplifier 174receives an RF feed signal RF_(FD) and provides the RF input signalRF_(IN) to the first RF impedance translation circuit 10 based on the RFfeed signal RF_(FD). The common power amplifier 174 and the first RFimpedance translation circuit 10 may operate using two or more RFcommunications bands. In an exemplary embodiment of the presentinvention, the common power amplifier 174 and the first RF impedancetranslation circuit 10 operate in either a first operating mode or asecond operating mode, such that during the first operating mode, thecommon power amplifier 174 and the first RF impedance translationcircuit 10 operate using a first RE communications band and during thesecond operating mode, the common power amplifier 174 and the first RFimpedance translation circuit 10 operate using a second RFcommunications band. The first RF communications band may be a highband, such as a 1.9 gigahertz mobile phone band, and the second RFcommunications band may be a low band, such as an 800 megahertz mobilephone band. The first RF communications band may have a first centerfrequency and the second RF communications band may have a second centerfrequency, such that a ratio of the first center frequency to the secondcenter frequency is greater than two.

For good power transfer, an output impedance from the common poweramplifier 174 should approximately match an impedance presented at theinput INPUT of first RF impedance translation circuit 10. Since a firstimpedance presented to the output OUTPUT of the first RF impedancetranslation circuit 10 may be translated into a second impedancepresented at the input INPUT of first RF impedance translation circuit10, the second impedance should approximately match the output impedancefrom the common power amplifier 174.

FIG. 13 shows details of the common power amplifier 174 illustrated inFIG. 12B according to one embodiment of the common power amplifier 174.The common power amplifier 174 includes a first final stage segment 176,a second final stage segment 178, up to and including an Nth final stagesegment 180, a first driver stage segment 182, a second driver stagesegment 184, up to and including an Nth driver stage segment 186, andpower amplifier segment control circuitry 188. When the first, thesecond, and up to and including the Nth driver stage segments 182, 184,186 are in an ENABLED state, and when the first, the second, and up toand including the Nth final stage segments 176, 178, 180 are in anENABLED state, the first driver stage segment 182, the second driverstage segment 184, and up to and including the Nth driver stage segment186 receive the RF feed signal RF_(FD) and feed the first final stagesegment 176, the second final stage segment 178, and up to and includingthe Nth final stage segment 180, respectively, based on amplifying theRF feed signal RF_(FD). The first, the second, and up to and includingthe Nth final stage segments 176, 178, 180 amplify and combine thesignals fed from the first, the second, and up to and including the Nthdriver stage segments 182, 184, 186, respectively, to provide the RFinput signal RF_(IN) to the first RF impedance translation circuit 10.When any of the first, the second, and up to and including the Nthdriver stage segments 182, 184, 186 are in a DISABLED state, an outputfrom the DISABLED driver stage segment may be driven to zero volts.

When any of the first, the second, and up to and including the Nth finalstage segments 176, 178, 180 are in a DISABLED state, an output from theDISABLED final stage segment may be in a high impedance condition. As aresult, an output power level from the common power amplifier 174 may becontrolled by selectively enabling or disabling driver stage segment andfinal stage segment pairs. When all of the final stage segments are inan ENABLED state, the output impedance from the common power amplifier174 may be at a minimum, and as final stage segments are DISABLED, theoutput impedance increases. Therefore, for the second impedancepresented from the first RF impedance translation circuit 10 to remainapproximately matched to the output impedance from the common poweramplifier 174, the impedance translation characteristics of the first RFimpedance translation circuit 10 may need to be adjusted.

For example, in an exemplary embodiment of the present invention, whenone or more of the final stage segments is in DISABLED state, the commonpower amplifier 174 has a first output power level and a first outputimpedance. When the final stage segments that were previously DISABLEDare now in an ENABLED state, the common power amplifier 174 has a secondoutput power level and a second output impedance, such that the secondoutput power level is greater than the first output power level and thesecond output impedance is less than the first output impedance. Theimpedance translation characteristics of the first RF impedancetranslation circuit 10 may be adjusted such that the second impedancepresented from the first RF impedance translation circuit 10 remainsabout matched to the first output impedance and to the second outputimpedance.

FIG. 14 shows the first RF impedance translation circuit 10 illustratedin FIG. 12A used with the common power amplifier 174 and an RF antenna190 according to an alternate embodiment of the present invention. Thecommon power amplifier 174 receives the RF feed signal RF_(FD) andprovides the RF input signal RF_(IN) to the first RF impedancetranslation circuit 10 based on the RF feed signal RF_(FD). The RFantenna 190 is coupled to the output OUTPUT of the first RF impedancetranslation circuit 10, such that the first RF impedance translationcircuit 10 provides the RF output signal RF_(OUT) to the RF antenna 190.Since the first impedance presented to the output OUTPUT of the first RFimpedance translation circuit 10 may be translated into the secondimpedance presented at the input INPUT of first RF impedance translationcircuit 10, the first impedance is based on the RF antenna 190.

FIG. 15 shows the first RF impedance translation circuit 10 illustratedin FIG. 12A used with the RF antenna 190 according to an additionalembodiment of the present invention. The RF antenna 190 is coupled tothe output OUTPUT of the first RF impedance translation circuit 10, suchthat the first RF impedance translation circuit 10 provides the RFoutput signal RF_(OUT) to the RF antenna 190. Since the first impedancepresented to the output OUTPUT of the first RF impedance translationcircuit 10 may be translated into the second impedance presented at theinput INPUT of first RF impedance translation circuit 10, the firstimpedance is based on the RE antenna 190. The RF antenna 190 may have avoltage standing wave ratio (VSWR) based on antenna loading conditions.The first impedance may be based on the VSWR; however, the impedancetranslation characteristics of the first RF impedance translationcircuit 10 may be adjusted such that the second impedance presented fromthe first RF impedance translation circuit 10 may remain about constantin the presence of VSWR variations. For example, in an exemplaryembodiment of the present invention, when the RF antenna 190 has a VSWRof about one-to-one, the second impedance has a first magnitude and whenthe RF antenna 190 has a VSWR of about four-to-one, the impedancetranslation characteristics of the first RF impedance translationcircuit 10 are adjusted such that the second impedance has a secondmagnitude, such that the first magnitude is about equal to the secondmagnitude.

FIG. 16 shows the first RF impedance translation circuit 10 illustratedin FIG. 12A used with a second RF impedance translation circuit 192according to another embodiment of the present invention. The commonpower amplifier 174 receives the RF feed signal RF_(FD) and feeds theinput INPUT of the second RF impedance translation circuit 192 based onthe RF feed signal RF_(FD). The output OUTPUT of the second RF impedancetranslation circuit 192 is coupled to the input INPUT of the first RFimpedance translation circuit 10, such that the second RF impedancetranslation circuit 192 provides the RF input signal RF_(IN) (not shown)to the first RF impedance translation circuit 10. The RF antenna 190 iscoupled to the output OUTPUT of the first RF impedance translationcircuit 10. High band receive circuitry 194 and low band receivecircuitry 196 are coupled to the input INPUT of the first RF impedancetranslation circuit 10. When receiving RF signals, the RF antenna 190provides the received RF signals to the first RE impedance translationcircuit 10, which forwards the received RF signals to the high bandreceive circuitry 194 or the low band receive circuitry 196. Whentransmitting RF signals, the common power amplifier 174 receives the RFfeed signal RF_(FD) and feeds the input INPUT of the second RF impedancetranslation circuit 192, which forwards an amplified RF feed signalRF_(FD) to the input INPUT of the first RF impedance translation circuit10, which forwards the amplified RF feed signal RF_(FD) to the RFantenna 190. The first RF impedance translation circuit 10 and thesecond RF impedance translation circuit 192 may adjust their impedancetranslation characteristics to maintain about a constant impedancebetween the input INPUT of the first RF impedance translation circuit 10and output OUTPUT of the second RF impedance translation circuit 192.

FIG. 17 shows the first RF impedance translation circuit 10 according toa supplemental embodiment of the first RF impedance translation circuit10. The first RF impedance translation circuit 10 illustrated in FIG. 17is similar to the first RF impedance translation circuit 10 illustratedin FIG. 1, except the inductive elements illustrated in FIG. 1 arereplaced with capacitive elements in FIG. 17, the variable shuntcapacitance circuits illustrated in FIG. 1 are replaced with variableshunt inductance circuits in FIG. 17, and the capacitance controlsignals illustrated in FIG. 1 are replaced with inductance controlsignals in FIG. 17.

Specifically, the first RF impedance translation circuit 10 includes afirst group 198 of capacitive elements, which includes a firstcapacitive element 200 and a second capacitive element 202, and a secondgroup 204 of capacitive elements, which includes a third capacitiveelement 206 and a fourth capacitive element 208.

The first group 198 of capacitive elements is cascaded in series betweenthe input INPUT and the output OUTPUT using the first connection node24, such that the first capacitive element 200 is electrically coupledbetween the input INPUT and the first connection node 24, and the secondcapacitive element 202 is electrically coupled between the output OUTPUTand the first connection node 24. The second group 204 of capacitiveelements is cascaded in series using multiple connection nodes, suchthat the third capacitive element 206 is electrically coupled betweenthe second connection node 26 and the third connection node 28, and thefourth capacitive element 208 is electrically coupled between the fourthconnection node 30 and the third connection node 28.

The first RF impedance translation circuit 10 includes a group ofswitching elements that are capable of electrically coupling the firstgroup 198 of capacitive elements to the second group 204 of capacitiveelements. Specifically, the first switching element 32 is electricallycoupled between the second connection node 26 and the input INPUT, thesecond switching element 34 is electrically coupled between the firstconnection node 24 and the third connection node 28, and the thirdswitching element 36 is electrically coupled between the fourthconnection node 30 and the output OUTPUT.

Further, the first RF impedance translation circuit 10 includes at leastone variable shunt inductance circuit electrically coupled between acommon reference CREF and at least one connection node in the first RFimpedance translation circuit 10. Specifically, the first RF impedancetranslation circuit 10 includes a first variable shunt inductancecircuit 210 electrically coupled between the common reference CREF andthe input INPUT, a second variable shunt inductance circuit 212electrically coupled between the common reference CREF and the firstconnection node 24, a third variable shunt inductance circuit 214electrically coupled between the common reference CREF and the outputOUTPUT, a fourth variable shunt inductance circuit 216 electricallycoupled between the common reference CREF and the second connection node26, a fifth variable shunt inductance circuit 218 electrically coupledbetween the common reference CREF and the third connection node 28, anda sixth variable shunt inductance circuit 220 electrically coupledbetween the common reference CREF and the fourth connection node 30.

Additionally, the first RF impedance translation circuit 10 includes thecontrol circuitry 50, which provides the first switch control signalSCS₁ to the first switching element 32, the second switch control signalSCS₂ to the second switching element 34, the third switch control signalSCS₃ to the third switching element 36, a first inductance controlsignal ICS₁ to the first variable shunt inductance circuit 210, a secondinductance control signal ICS₂ to the second variable shunt inductancecircuit 212, a third inductance control signal ICS₃ to the thirdvariable shunt inductance circuit 214, a fourth inductance controlsignal ICS₄ to the fourth variable shunt inductance circuit 216, a fifthinductance control signal ICS₅ to the fifth variable shunt inductancecircuit 218, and a sixth inductance control signal ICS₆ to the sixthvariable shunt inductance circuit 220.

By providing the appropriate first switch control signal SCS₁, secondswitch control signal SCS₂, and third switch control signal SCS₃, thecontrol circuitry 50 may select either an OFF state or an ON stateassociated with each of the first switching element 32, the secondswitching element 34, and the third switching element 36, respectively.When each ON state is selected, the first switching element 32electrically couples the second connection node 26 to the input INPUT,the second switching element 34 electrically couples the firstconnection node 24 to the third connection node 28, and the thirdswitching element 36 electrically couples the fourth connection node 30to the output OUTPUT. When each OFF state is selected, the firstswitching element 32 does not intentionally provide a conduction pathbetween the second connection node 26 and the input INPUT, the secondswitching element 34 does not intentionally provide a conduction pathbetween the first connection node 24 and the third connection node 28,and the third switching element 36 does not intentionally provide aconduction path between the fourth connection node 30 and the outputOUTPUT.

By providing the appropriate first inductance control signal ICS₁,second inductance control signal ICS₂, third inductance control signalICS₃, fourth inductance control signal ICS₄, fifth inductance controlsignal ICS₅, and sixth inductance control signal ICS₆, the controlcircuitry 50 may select a desired inductance associated with each of thefirst variable shunt inductance circuit 210, the second variable shuntinductance circuit 212, the third variable shunt inductance circuit 214,the fourth variable shunt inductance circuit 216, the fifth variableshunt inductance circuit 218, and the sixth variable shunt inductancecircuit 220, respectively. The first variable shunt inductance circuit210 presents a selected inductance between the common reference CREF andthe input INPUT, the second variable shunt inductance circuit 212presents a selected inductance between the common reference CREF and thefirst connection node 24, the third variable shunt inductance circuit214 presents a selected inductance between the common reference CREF andthe output OUTPUT, the fourth variable shunt inductance circuit 216presents a selected inductance between the common reference CREF and thesecond connection node 26, the fifth variable shunt inductance circuit218 presents a selected inductance between the common reference CREF andthe third connection node 28, and the sixth variable shunt inductancecircuit 220 presents a selected inductance between the common referenceCREF and the fourth connection node 30.

A first impedance presented to the output OUTPUT may be translated intoa second impedance presented at the input INPUT based on the selectedinductances associated with each of the first, the second, the third,the fourth, the fifth, and the sixth variable shunt inductance circuits210, 212, 214, 216, 218, 220 and the switching states of the first, thesecond, and the third switching elements 32, 34, 36. Further, impedancetranslation characteristics of the first RF impedance translationcircuit 10 may be based on the selected inductances associated with eachof the first, the second, the third, the fourth, the fifth, and thesixth variable shunt inductance circuits 210, 212, 214, 216, 218, 220and the switching states of the first, the second, and the thirdswitching elements 32, 34, 36. In general, the impedance translationcharacteristics of the first RF impedance translation circuit 10 may bebased on each inductance control signal and on each switch controlsignal, and the first impedance presented to the output OUTPUT may betranslated into the second impedance presented at the input INPUT basedon each inductance control signal and on each switch control signal.

In a first exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 17, one of the first switching element32, the second switching element 34, and the third switching element 36,and a corresponding one of the first switch control signal SCS₁, thesecond switch control signal SCS₂, and the third switch control signalSCS₃ are omitted.

In a second exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 17, one of the first variable shuntinductance circuit 210, the second variable shunt inductance circuit212, the third variable shunt inductance circuit 214, the fourthvariable shunt inductance circuit 216, the fifth variable shuntinductance circuit 218, and the sixth variable shunt inductance circuit220, and a corresponding one of the first inductance control signalICS₁, the second inductance control signal ICS₂, the third inductancecontrol signal ICS₃, the fourth inductance control signal ICS₄, thefifth inductance control signal ICS₅, and the sixth inductance controlsignal ICS₆ are omitted.

In a third exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 17, two of the first variable shuntinductance circuit 210, the second variable shunt inductance circuit212, the third variable shunt inductance circuit 214, the fourthvariable shunt inductance circuit 216, the fifth variable shuntinductance circuit 218, and the sixth variable shunt inductance circuit220, and a corresponding two of the first inductance control signalICS₁, the second inductance control signal ICS₂, the third inductancecontrol signal ICS₃, the fourth inductance control signal ICS₄, thefifth inductance control signal ICS₅, and the sixth inductance controlsignal ICS₆ are omitted.

In a fourth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 17, three of the first variable shuntinductance circuit 210, the second variable shunt inductance circuit212, the third variable shunt inductance circuit 214, the fourthvariable shunt inductance circuit 216, the fifth variable shuntinductance circuit 218, and the sixth variable shunt inductance circuit220, and a corresponding three of the first inductance control signalICS₁, the second inductance control signal ICS₂, the third inductancecontrol signal ICS₃, the fourth inductance control signal ICS₄, thefifth inductance control signal ICS₅, and the sixth inductance controlsignal ICS₆ are omitted.

In a fifth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 17, four of the first variable shuntinductance circuit 210, the second variable shunt inductance circuit212, the third variable shunt inductance circuit 214, the fourthvariable shunt inductance circuit 216, the fifth variable shuntinductance circuit 218, and the sixth variable shunt inductance circuit220, and a corresponding four of the first inductance control signalICS₁, the second inductance control signal ICS₂, the third inductancecontrol signal ICS₃, the fourth inductance control signal ICS₄, thefifth inductance control signal ICS₅, and the sixth inductance controlsignal ICS₆ are omitted.

In a sixth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 17, five of the first variable shuntinductance circuit 210, the second variable shunt inductance circuit212, the third variable shunt inductance circuit 214, the fourthvariable shunt inductance circuit 216, the fifth variable shuntinductance circuit 218, and the sixth variable shunt inductance circuit220, and a corresponding five of the first inductance control signalICS₁, the second inductance control signal ICS₂, the third inductancecontrol signal ICS₃, the fourth inductance control signal ICS₄, thefifth inductance control signal ICS₅, and the sixth inductance controlsignal ICS₆ are omitted. In one embodiment of the first RF impedancetranslation circuit 10 illustrated in FIG. 17, the common reference CREFis ground.

In other embodiments of the first RF impedance translation circuit 10illustrated in any or all of FIGS. 2, 4, 12A, 12B, 13, 14, 15, 16, and18, any or all of the inductive elements may be replaced with capacitiveelements, any or all of the variable shunt capacitance circuits may bereplaced with variable shunt inductance circuits, and any or all of thecapacitance control signals may be replaced with inductance controlsignals. Furthermore, any or all of the capacitive elements may bevariable capacitive elements, which may be similar to any or all of thevariable shunt capacitance circuits illustrated in FIGS. 5, 9, 10, and11. Any or all of the variable shunt inductance circuits may usetechniques that are similar to any or all of the variable shuntcapacitance circuits illustrated in FIGS. 5, 9, and 10.

FIG. 18 shows the first portion 52 of the first RF impedance translationcircuit 10 according to an alternative embodiment of the first RFimpedance translation circuit 10. The first RF impedance translationcircuit 10 illustrated in FIG. 18 is similar to the first RF impedancetranslation circuit 10 illustrated in FIG. 1, except the first RFimpedance translation circuit 10 illustrated in FIG. 18 includesdifferential inputs and differential outputs for receiving and providingdifferential input signals and differential output signals,respectively.

Specifically, the first RF impedance translation circuit 10 includes thefirst group 12 of inductive elements, which includes the first inductiveelement 14 and the second inductive element 16, the second group 18 ofinductive elements, which includes the third inductive element 20 andthe fourth inductive element 22, the third group 58 if inductiveelements, which includes the fifth inductive element 54 and the sixthinductive element 56, and a fourth group 222 of inductive elements,which includes the seventh inductive element 60 and the eighth inductiveelement 62. The first group 12 of inductive elements is cascaded inseries between a non-inverting input INPUT_NI and a non-inverting outputOUTPUT_NI using the first connection node 24, such that the firstinductive element 14 is electrically coupled between the non-invertinginput INPUT_NI and the first connection node 24, and the secondinductive element 16 is electrically coupled between the non-invertingoutput OUTPUT_NI and the first connection node 24. The second group 18of inductive elements is cascaded in series using multiple connectionnodes, such that the third inductive element 20 is electrically coupledbetween the second connection node 26 and the third connection node 28,and the fourth inductive element 22 is electrically coupled between thefourth connection node 30 and the third connection node 28.

The third group 58 of inductive elements is cascaded in series betweenan inverting input INPUT_I and an inverting output OUTPUT_I using thefifth connection node 66, such that the fifth inductive element 54 iselectrically coupled between the inverting input INPUT_I and the fifthconnection node 66, and the sixth inductive element 56 is electricallycoupled between the inverting output OUTPUT_I and the fifth connectionnode 58. The fourth group 222 of inductive elements is cascaded inseries using multiple connection nodes, such that the seventh inductiveelement 60 is electrically coupled between the sixth connection node 68and the seventh connection node 70, and the eighth inductive element 62is electrically coupled between the eighth connection node 72 and theseventh connection node 70. The first RF impedance translation circuit10 includes a first switching group 224 of switching elements that arecapable of electrically coupling the first group 12 of inductiveelements to the second group 18 of inductive elements, and a secondswitching group 226 of switching elements that are capable ofelectrically coupling the third group 58 of inductive elements to thefourth group 222 of inductive elements. The first switching group 224includes the first, the second, and the third switching elements 32, 34,36 and the second switching group 226 includes the fourth, the fifth,and the sixth switching elements 78, 80, 82. Specifically, the firstswitching element 32 is electrically coupled between the secondconnection node 26 and the non-inverting input INPUT_NI, the secondswitching element 34 is electrically coupled between the firstconnection node 24 and the third connection node 28, and the thirdswitching element 36 is electrically coupled between the fourthconnection node 30 and the non-inverting output OUTPUT_NI. The fourthswitching element 78 is electrically coupled between the sixthconnection node 68 and the inverting input INPUT_I, the fifth switchingelement 80 is electrically coupled between the fifth connection node 66and the seventh connection node 70, and the sixth switching element 82is electrically coupled between the eighth connection node 72 and theinverting output OUTPUT_I.

Further, the first RF impedance translation circuit 10 includes at leastone variable shunt capacitance circuit electrically coupled betweenconnection nodes in the first RF impedance translation circuit 10.Specifically, the first RF impedance translation circuit 10 includes thefirst variable shunt capacitance circuit 38 electrically coupled betweenthe non-inverting input INPUT_NI and the inverting input INPUT_I, thesecond variable shunt capacitance circuit 40 electrically coupledbetween the fifth connection node 66 and the first connection node 24,the third variable shunt capacitance circuit 42 electrically coupledbetween the non-inverting output OUTPUT_NI and the inverting outputOUTPUT_I, the fourth variable shunt capacitance circuit 44 electricallycoupled between the sixth connection node 68 and the second connectionnode 26, the fifth variable shunt capacitance circuit 46 electricallycoupled between the seventh connection node 70 and the third connectionnode 28, and the sixth variable shunt capacitance circuit 48electrically coupled between the eighth connection node 72 and thefourth connection node 30.

Additionally, the first RF impedance translation circuit 10 includescontrol circuitry 50 (FIG. 3), which provides the first switch controlsignal SCS₁ to the first switching element 32, the second switch controlsignal SCS₂ to the second switching element 34, the third switch controlsignal SCS₃ to the third switching element 36, fourth switch controlsignal SCS₄ to the fourth switching element 78, the fifth switch controlsignal SCS₅ to the fifth switching element 80, the sixth switch controlsignal SCS₆ to the sixth switching element 82, the first capacitancecontrol signal CCS₁ to the first variable shunt capacitance circuit 38,the second capacitance control signal CCS₂ to the second variable shuntcapacitance circuit 40, the third capacitance control signal CCS₃ to thethird variable shunt capacitance circuit 42, the fourth capacitancecontrol signal CCS₄ to the fourth variable shunt capacitance circuit 44,the fifth capacitance control signal CCS₅ to the fifth variable shuntcapacitance circuit 46, and the sixth capacitance control signal CCS₆ tothe sixth variable shunt capacitance circuit 48.

By providing the appropriate first switch control signal SCS₁, secondswitch control signal SCS₂, third switch control signal SCS₃, fourthswitch control signal SCS₄, fifth switch control signal SCS₅, and sixthswitch control signal SCS₆, the control circuitry 50 may select eitheran OFF state or an ON state associated with each of the first switchingelement 32, the second switching element 34, the third switching element36, the fourth switching element 78, the fifth switching element 80, andthe sixth switching element 82, respectively. When each ON state isselected, the first switching element 32 electrically couples the secondconnection node 26 to the non-inverting input INPUT_NI, the secondswitching element 34 electrically couples the first connection node 24to the third connection node 28, the third switching element 36electrically couples the fourth connection node 30 to the non-invertingoutput OUTPUT_NI, the fourth switching element 78 electrically couplesthe sixth connection node 68 to the inverting input INPUT_N, the fifthswitching element 80 electrically couples the fifth connection node 66to the seventh connection node 70, and the sixth switching element 82electrically couples the eighth connection node 72 to the invertingoutput OUTPUT_I.

When each OFF state is selected, the first switching element 32 does notintentionally provide a conduction path between the second connectionnode 26 and the non-inverting input INPUT_NI, the second switchingelement 34 does not intentionally provide a conduction path between thefirst connection node 24 and the third connection node 28, the thirdswitching element 36 does not intentionally provide a conduction pathbetween the fourth connection node 30 and the non-inverting outputOUTPUT_NI, the fourth switching element 78 does not intentionallyprovide a conduction path between the sixth connection node 68 and theinverting input INPUT_I, the fifth switching element 80 does notintentionally provide a conduction path between the fifth connectionnode 66 and the seventh connection node 70, and the sixth switchingelement 82 does not intentionally provide a conduction path between theeighth connection node 72 and the inverting output OUTPUT_I.

By providing the appropriate first capacitance control signal CCS₁,second capacitance control signal CCS₂, third capacitance control signalCCS₃, fourth capacitance control signal CCS₄, fifth capacitance controlsignal CCS₅, and sixth capacitance control signal CCS₆, the controlcircuitry 50 may select a desired capacitance associated with each ofthe first variable shunt capacitance circuit 38, the second variableshunt capacitance circuit 40, the third variable shunt capacitancecircuit 42, the fourth variable shunt capacitance circuit 44, the fifthvariable shunt capacitance circuit 46, and the sixth variable shuntcapacitance circuit 48, respectively.

The first variable shunt capacitance circuit 38 presents a selectedcapacitance between the non-inverting input INPUT_NI and the invertinginput INPUT_I, the second variable shunt capacitance circuit 40 presentsa selected capacitance between the fifth connection node 66 and thefirst connection node 24, the third variable shunt capacitance circuit42 presents a selected capacitance between the non-inverting outputOUTPUT_NI and the inverting output INPUT_I, the fourth variable shuntcapacitance circuit 44 presents a selected capacitance between the sixthconnection node 68 and the second connection node 26, the fifth variableshunt capacitance circuit 46 presents a selected capacitance between theseventh connection node 70 and the third connection node 28, and thesixth variable shunt capacitance circuit 48 presents a selectedcapacitance between the eighth connection node 72 and the fourthconnection node 30.

A first impedance presented to and between the non-inverting outputOUTPUT_NI and the inverting output OUTPUT_I may be translated into asecond impedance presented at and between the non-inverting inputINPUT_NI and the inverting input INPUT_I based on the selectedcapacitances associated with each of the first, the second, the third,the fourth, the fifth, and the sixth variable shunt capacitance circuits38, 40, 42, 44, 46, 48 and the switching states of the first, thesecond, the third, the fourth, the fifth, and the sixth switchingelements 32, 34, 36, 78, 80, 82. Further, impedance translationcharacteristics of the first RF impedance translation circuit 10 may bebased on the selected capacitances associated with each of the first,the second, the third, the fourth, the fifth, and the sixth variableshunt capacitance circuits 38, 40, 42, 44, 46, 48 and the switchingstates of the first, the second, the third, the fourth, the fifth, andthe sixth switching elements 32, 34, 36, 78, 80, 82. In general, theimpedance translation characteristics of the first RF impedancetranslation circuit 10 may be based on each capacitance control signaland on each switch control signal, and the first impedance presented toand between the non-inverting output OUTPUT_NI and the inverting outputOUTPUT_I may be translated into the second impedance presented at andbetween the non-inverting input INPUT_NI and the inverting input INPUT_Ibased on each capacitance control signal and on each switch controlsignal.

In a first exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 18, one of the first switching element32, the second switching element 34, the third switching element 36, thefourth switching element 78, the fifth switching element 80, and thesixth switching element 82, and a corresponding one of the first switchcontrol signal SCS₁, the second switch control signal SCS₂, the thirdswitch control signal SCS₃, the fourth switch control signal SCS₄, thefifth switch control signal SCS₅, and the sixth switch control signalSCS₆, are omitted.

In a second exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 18, two of the first switching element32, the second switching element 34, the third switching element 36, thefourth switching element 78, the fifth switching element 80, and thesixth switching element 82, and a corresponding two of the first switchcontrol signal SCS₁, the second switch control signal SCS₂, the thirdswitch control signal SCS₃, the fourth switch control signal SCS₄, thefifth switch control signal SCS₅, and the sixth switch control signalSCS₆, are omitted.

In a third exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 18, three of the first switching element32, the second switching element 34, the third switching element 36, thefourth switching element 78, the fifth switching element 80, and thesixth switching element 82, and a corresponding three of the firstswitch control signal SCS₁, the second switch control signal SCS₂, thethird switch control signal SCS₃, the fourth switch control signal SCS₄,the fifth switch control signal SCS₅, and the sixth switch controlsignal SCS₆, are omitted.

In a fourth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 18, four of the first switching element32, the second switching element 34, the third switching element 36, thefourth switching element 78, the fifth switching element 80, and thesixth switching element 82, and a corresponding four of the first switchcontrol signal SCS₁, the second switch control signal SCS₂, the thirdswitch control signal SCS₃, the fourth switch control signal SCS₄, thefifth switch control signal SCS₅, and the sixth switch control signalSCS₆, are omitted.

In a fifth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 18, one of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, and the sixth variable shunt capacitance circuit 48, and acorresponding one of the first capacitance control signal CCS₁, thesecond capacitance control signal CCS₂, the third capacitance controlsignal CCS₃, the fourth capacitance control signal CCS₄, the fifthcapacitance control signal CCS₅, and the sixth capacitance controlsignal CCS₆ are omitted.

In a sixth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 18, two of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, and the sixth variable shunt capacitance circuit 48, and acorresponding two of the first capacitance control signal CCS₁, thesecond capacitance control signal CCS₂, the third capacitance controlsignal CCS₃, the fourth capacitance control signal CCS₄, the fifthcapacitance control signal CCS₅, and the sixth capacitance controlsignal CCS₆ are omitted.

In a seventh exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 18, three of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, and the sixth variable shunt capacitance circuit 48, and acorresponding three of the first capacitance control signal CCS₁, thesecond capacitance control signal CCS₂, the third capacitance controlsignal CCS₃, the fourth capacitance control signal CCS₄, the fifthcapacitance control signal CCS₅, and the sixth capacitance controlsignal CCS₆ are omitted.

In a eighth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 18, four of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, and the sixth variable shunt capacitance circuit 48, and acorresponding four of the first capacitance control signal CCS₁, thesecond capacitance control signal CCS₂, the third capacitance controlsignal CCS₃, the fourth capacitance control signal CCS₄, the fifthcapacitance control signal CCS₅, and the sixth capacitance controlsignal CCS₆ are omitted.

In a ninth exemplary embodiment of the first RF impedance translationcircuit 10 illustrated in FIG. 18, five of the first variable shuntcapacitance circuit 38, the second variable shunt capacitance circuit40, the third variable shunt capacitance circuit 42, the fourth variableshunt capacitance circuit 44, the fifth variable shunt capacitancecircuit 46, and the sixth variable shunt capacitance circuit 48, and acorresponding five of the first capacitance control signal CCS₁, thesecond capacitance control signal CCS₂, the third capacitance controlsignal CCS₃, the fourth capacitance control signal CCS₄, the fifthcapacitance control signal CCS₅, and the sixth capacitance controlsignal CCS₆ are omitted.

In other embodiments of the first RF impedance translation circuit 10illustrated in any or all of FIGS. 2, 4, 12A, 12B, 13, 14, 15, 16, and17, differential circuitry, which is similar to the differentialcircuitry illustrated in FIG. 18, may be used instead of thesingle-ended circuitry illustrated in any or all of FIGS. 2, 4, 12A,12B, 13, 14, 15, 16, and 17.

In one embodiment of the first RF impedance translation circuit 10illustrated in any or all of FIGS. 2, 4, 12A, 12B, 13, 14, 15, 16, 17,and 18, any or all of the first switching element 32, the secondswitching element 34, the third switching element 36, the fourthswitching element 78, the fifth switching element 80, the sixthswitching element 82, the seventh switching element 84, and the eighthswitching element 84, may include a solid state switching device, suchas any type of bipolar transistor element, any type of field effecttransistor (FET) element, such as a pseudomorphic high electron mobilitytransistor (pHEMT) element, any type of switching diode element, such asa P-type material-intrinsic material-N-type material (PIN) diode, anytype of silicon-on-insulator (SOI) switching element, or the like, or antype of electro-mechanical switching device, such as a relay, amicro-electromechanicalsystems (MEMS) contact switch, or the like.

Some of the circuitry previously described may use discrete circuitry,integrated circuitry, programmable circuitry, non-volatile circuitry,volatile circuitry, software executing instructions on computinghardware, firmware executing instructions on computing hardware, thelike, or any combination thereof. Any computing hardware may includemainframes, micro-processors, micro-controllers, DSPs, the like, or anycombination thereof.

None of the embodiments of the present invention are intended to limitthe scope of any other embodiment of the present invention. Any or allof any embodiment of the present invention may be combined with any orall of any other embodiment of the present invention to create newembodiments of the present invention.

Those skilled in the art will recognize improvements and modificationsto the preferred embodiments of the present invention. All suchimprovements and modifications are considered within the scope of theconcepts disclosed herein and the claims that follow.

What is claimed is:
 1. A first radio frequency (RF) impedancetranslation circuit comprising: a first plurality of inductive elementscascaded in series without any series switching elements between aninput and an output using at least a first of a plurality of connectionnodes; a second plurality of inductive elements cascaded in series usingthe plurality of connection nodes; a first plurality of switchingelements, such that: a first of the first plurality of switchingelements is coupled between a second of the plurality of connectionnodes and one selected from the group consisting of the input, theoutput, and the first of the plurality of connection nodes; a second ofthe first plurality of switching elements is coupled between a third ofthe plurality of connection nodes and another selected from the groupconsisting of the input, the output, and the first of the plurality ofconnection nodes; and each of the first plurality of switching elementshas one of an OFF state and an ON state based on a switch controlsignal; at least one variable shunt capacitance circuit, such that eachvariable shunt capacitance circuit: is coupled between a commonreference and a corresponding one selected from the group consisting ofthe input, the output, and the plurality of connection nodes; and has acapacitance based on a capacitance control signal; and control circuitryadapted to provide each capacitance control signal to a correspondingeach variable shunt capacitance circuit and each switch control signalto a corresponding each of the first plurality of switching elements,wherein a first impedance presented to the output is translated into asecond impedance presented at the input; and further comprising a commonpower amplifier comprising a plurality of segmented output stagescoupled in parallel, such that: when at least one of the segmentedoutput stages is in a DISABLED state, the common power amplifier has afirst output power level and a first output impedance; and when the atleast one of the segmented output stages is in an ENABLED state, thecommon power amplifier has a second output power level and a secondoutput impedance, wherein the second output power level is greater thanthe first output power level and the second output impedance is lessthan the first output impedance.
 2. The first RF impedance translationcircuit of claim 1 wherein the input is adapted to receive an RF inputsignal and the output is adapted to provide an RF output signal based onthe RF input signal, wherein impedance translation characteristics ofthe first RF impedance translation circuit are based on each capacitancecontrol signal and each switch control signal.
 3. The first RF impedancetranslation circuit of claim 2 further comprising at least one pluralityof inductive elements cascaded in series using the plurality ofconnection nodes, such that: the first plurality of switching elementsfurther comprises: a third switching element coupled between a fourth ofthe plurality of connection nodes and one selected from the groupconsisting of the input, the output, and the first of the plurality ofconnection nodes; and a fourth switching element coupled between a fifthof the plurality of connection nodes and another selected from the groupconsisting of the input, the output, and the first of the plurality ofconnection nodes; and the at least one variable shunt capacitancecircuit comprises at least three variable shunt capacitance circuits. 4.The first RF impedance translation circuit of claim 2 wherein: the firstplurality of inductive elements comprises at least three inductiveelements cascaded in series without any series switching elementsbetween the input and the output using at least the first of theplurality of connection nodes and a fourth of the plurality ofconnection nodes; the second plurality of inductive elements comprisesat least three inductive elements cascaded in series using the pluralityof connection nodes; the first plurality of switching elements furthercomprises a third switching element coupled between a fifth of theplurality of connection nodes and one selected from the group consistingof the input, the output, the first of the plurality of connectionnodes, and the fourth of the plurality of connection nodes; and the atleast one variable shunt capacitance circuit comprises at least threevariable shunt capacitance circuits.
 5. The first RF impedancetranslation circuit of claim 2 wherein: each of at least one of thefirst plurality of inductive elements comprises a transmission linesegment; and each of at least one of the second plurality of inductiveelements comprises a transmission line segment.
 6. The first RFimpedance translation circuit of claim 2 wherein: each of at least oneof the first plurality of inductive elements comprises a spiraltransmission line segment; and each of at least one of the secondplurality of inductive elements comprises a spiral transmission linesegment.
 7. The first RF impedance translation circuit of claim 2wherein: each of at least one of the first plurality of inductiveelements comprises a spiral printed circuit board (PCB) trace; and eachof at least one of the second plurality of inductive elements comprisesa spiral PCB trace.
 8. The first RF impedance translation circuit ofclaim 2 wherein one of the at least one variable shunt capacitancecircuit comprises a varactor diode, which provides capacitance based ona direct current (DC) bias voltage, which is based on a correspondingcapacitance control signal.
 9. The first RF impedance translationcircuit of claim 2 wherein one of the at least one variable shuntcapacitance circuit comprises at least one switched capacitive element,such that each switched capacitive element has one of an OFF state andan ON state based on a corresponding capacitance control signal.
 10. Thefirst RF impedance translation circuit of claim 2 wherein the commonreference is ground.
 11. The first RF impedance translation circuit ofclaim 2 adapted to: operate in one of a first operating mode and asecond operating mode; and operate using a first RF communications bandduring the first operating mode and operate using a second RFcommunications band during the second operating mode.
 12. The first RFimpedance translation circuit of claim 11 wherein: the first RFcommunications band has a first center frequency; and the second RFcommunications band has a second center frequency, such that a ratio ofthe first center frequency to the second center frequency is greaterthan two.
 13. The first RF impedance translation circuit of claim 11wherein the common power amplifier is adapted to provide the RF inputsignal.
 14. The first RF impedance translation circuit of claim 13wherein an RF antenna is adapted to receive the RF output signal, suchthat the first impedance is based on the RF antenna.
 15. The first RFimpedance translation circuit of claim 2 wherein an RF antenna isadapted to receive the RF output signal, such that the first impedanceis based on the RF antenna.
 16. The first RF impedance translationcircuit of claim 15 wherein: when the RF antenna has a voltage standingwave ratio (VSWR) of about one-to-one, the second impedance has a firstmagnitude; and when the RF antenna has a VSWR of about four-to-one, thesecond impedance has a second magnitude, which is about equal to thefirst magnitude.
 17. The first RF impedance translation circuit of claim1 wherein when the at least one of the segmented output stages is in theDISABLED state, the second impedance is about matched to the firstoutput impedance and when the at least one of the segmented outputstages is in the ENABLED state, the second impedance is about matched tothe second output impedance.
 18. A first radio frequency (RF) impedancetranslation circuit comprising: a first plurality of capacitive elementscascaded in series without any series switching elements between aninput and an output using at least a first of a plurality of connectionnodes; a second plurality of capacitive elements cascaded in seriesusing the plurality of connection nodes; a first plurality of switchingelements, such that: a first of the first plurality of switchingelements is coupled between a second of the plurality of connectionnodes and one selected from the group consisting of the input, theoutput, and the first of the plurality of connection nodes; a second ofthe first plurality of switching elements is coupled between a third ofthe plurality of connection nodes and another selected from the groupconsisting of the input, the output, and the first of the plurality ofconnection nodes; and each of the first plurality of switching elementshas one of an OFF state and an ON state based on a switch controlsignal; at least one variable shunt inductance circuit, such that eachvariable shunt inductance circuit: is coupled between a common referenceand a corresponding one selected from the group consisting of the input,the output, and the plurality of connection nodes; and has an inductancebased on an inductance control signal; and control circuitry adapted toprovide each inductance control signal to a corresponding each variableshunt inductance circuit and each switch control signal to acorresponding each of the first plurality of switching elements, whereina first impedance presented to the output is translated into a secondimpedance presented at the input; and further comprising: a common poweramplifier comprising a plurality of segmented output stages coupled inparallel, such that: when at least one of the segmented output stages isin a DISABLED state, the common power amplifier has a first output powerlevel and a first output impedance; and when the at least one of thesegmented output stages is in an ENABLED state, the common poweramplifier has a second output power level and a second output impedance,wherein the second output power level is greater than the first outputpower level and the second output impedance is less than the firstoutput impedance.
 19. A first differential radio frequency (RF)impedance translation circuit comprising: a first plurality of inductiveelements cascaded in series without any series switching elementsbetween a non-inverting input and a non-inverting output using at leasta first of a first plurality of connection nodes; a second plurality ofinductive elements cascaded in series using the first plurality ofconnection nodes; a third plurality of inductive elements cascaded inseries without any series switching elements between an inverting inputand an inverting output using at least a first of a second plurality ofconnection nodes; a fourth plurality of inductive elements cascaded inseries using the second plurality of connection nodes; a first pluralityof switching elements, such that: a first of the first plurality ofswitching elements is coupled between a second of the first plurality ofconnection nodes and one selected from the group consisting of thenon-inverting input, the non-inverting output, and the first of thefirst plurality of connection nodes; a second of the first plurality ofswitching elements is coupled between a third of the first plurality ofconnection nodes and another selected from the group consisting of thenon-inverting input, the non-inverting output, and the first of thefirst plurality of connection nodes; and each of the first plurality ofswitching elements has one of an OFF state and an ON state based on aswitch control signal; a second plurality of switching elements, suchthat: a first of the second plurality of switching elements is coupledbetween a second of the second plurality of connection nodes and oneselected from the group consisting of the inverting input, the invertingoutput, and the first of the second plurality of connection nodes; asecond of the second plurality of switching elements is coupled betweena third of the second plurality of connection nodes and another selectedfrom the group consisting of the inverting input, the inverting output,and the first of the second plurality of connection nodes; and each ofthe second plurality of switching elements has one of an OFF state andan ON state based on a switch control signal; at least one variableshunt capacitance circuit, such that each variable shunt capacitancecircuit: is coupled between a corresponding one selected from a firstgroup consisting of the non-inverting input, the non-inverting output,and the first plurality of connection nodes, and a corresponding oneselected from a second group consisting of the inverting input, theinverting output, and the second plurality of connection nodes; and hasa capacitance based on a capacitance control signal; and controlcircuitry adapted to provide each capacitance control signal to acorresponding each variable shunt capacitance circuit and each switchcontrol signal to a corresponding each of the first plurality ofswitching elements or each of the second plurality of switchingelements, to provide impedance translation characteristics of the firstdifferential RF impedance translation circuit, wherein a first impedancepresented between the non-inverting output and the inverting output istranslated into a second impedance presented between the non-invertinginput and the inverting input.